Autor: Morawski, A.W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Thermally Stimulated Electron Emission from K-Bi-GICs
Autorzy:: Chrzanowski, J.
Klimkiewicz, R.
Morawski, A. W.
Powiązania:: https://bibliotekanauki.pl/articles/1968867.pdf
Data publikacji:: 1998-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.20.Tx
79.75.+g
79.20.Kz
Opis:: The results of the investigations of thermally stimulated electron emission from graphite submitted to intercalation of K-Bi alloy, in the temperature range of 100-400 K, are presented. Total and partial pressure in the measuring chamber in relation to the temperature of the sample are also reported. The insertion of a K-Bi alloy into the interlayers of graphite considerably changes thermally stimulated electron emission properties. The emission images I(T) depend on the content of intercalate and the emission maxima obtained at temperatures of about 170 and 210 K are conditioned by the desorption of a gas while the total pressure above the different samples is of the same order. The desorption of gases at a temperature over 250 K does not cause any increase in the electron emission.
Źródło:: Acta Physica Polonica A; 1998, 93, 3; 531-537
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As
Autorzy:: Figielski, T.
Wosiński, T.
Pelya, O.
Sadowski, J.
Morawski, A.
Mąkosa, A.
Dobrowolski, W.
Jagielski, J.
Wróbel, J.
Powiązania:: https://bibliotekanauki.pl/articles/2035752.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.63.-b
75.60.-d
73.20.Fz
Opis:: We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 525-531
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Vertical Electron Transport through PbS-EuS Structures
Autorzy:: Wrotek, S.
Dybko, K.
Morawski, A.
Mąkosa, A.
Wosiński, T.
Figielski, T.
Tkaczyk, Z.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Szczerbakow, A.
Grasza, K.
Wróbel, J.
Palosz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2036032.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 629-635
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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