Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Mohamed, S.A." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Structural and Optical Properties of Nanostructured Fe-Doped SnO₂
Autorzy:
Saleh, S.
Ibrahim, A.
Mohamed, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398977.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
61.05.C-
78.20.-e
Opis:
Nanocrystalline $Sn_{1-x}Fe_xO_2$ (where x = 0, 0.01, 0.02, 0.03 and 0.04) powders have been successfully synthesized by the hydrothermal method followed by sintering at 1000°C for 3 h. The morphology and structure of the samples have been analyzed by field emission scanning electron microscope and X-ray diffraction, respectively. X-ray diffraction results revealed that all diffraction peaks positions agree well with the reflection of a tetragonal rutile structure of SnO₂ phase without extra peaks. The formation of a tetragonal rutile structure of SnO₂ nanostructures was further supported by the Raman spectra. The band gap of Fe-doped SnO₂ nanoparticles was estimated from the diffuse reflectance spectra using the Kubelka-Munk function and it was decreasing slightly with the increase of Fe ion concentration from 3.59 to 3.52 eV. The variation in band gap is attributed predominantly to the lattice strain and particle size. The presence of chemical bonding was confirmed by the Fourier transform infrared spectra.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1220-1225
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of~Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers
Autorzy:
Mohamed, S.
Raaif, M.
Abd El-Rahman, A.
Shaaban, E.
Powiązania:
https://bibliotekanauki.pl/articles/1493713.pdf
Data publikacji:
2011-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Dj
61.05.cp
73.61.-r
78.66.-w
Opis:
Nitrided surfaces and composition gradients in thin films exhibit interesting mechanical, electrical and optical properties. Therefore, silicon (Si) thin films were prepared by electron beam evaporation and nitrided by an inductively coupled rf plasma. The effects of successive plasma processing power on structural and optical properties as well as electrical resistivity were examined by different characterization techniques. The Si thin films were transformed gradually into nitrides compound thin films and the amount of nitrogen in the film increased with increasing the rf processing power. The Si nitrided films showed structural, optical and electrical properties that depend on the nitriding power. Increasing the rf plasma processing power caused amorphization, reduced the thickness, increased transmittance, increased resistivity and decreased the reflectance of the Si films. The electrical resistivity increased about eight orders of magnitude when the sample nitrided at 500 W. Different optical band gap were determined indicating the presence of different competing phases in the same film. The decrease in refractive index with plasma treatment power is attributed to the possible change in the bucking density as well as to the increase in the band gap.
Źródło:
Acta Physica Polonica A; 2011, 120, 3; 552-557
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies