Autor: Małachowski, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Energy and Optical Absorption Spectra of Multiply Charged Anisotropic Quantum Boxes
Autorzy:: Trojnar, A.
Małachowski, T.
Wójs, A.
Powiązania:: https://bibliotekanauki.pl/articles/2047372.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.22.-f
78.67.Hc
71.35.-y
71.35.Pq
Opis:: Using a simple model of a two-dimensional rectangular quantum box we study the effects of size and anisotropy on the energy and photoluminescence spectra of neutral and charged quantum dots. The competition of symmetries and energy/length scales of the free exciton or trion and of the confining potential is analyzed. The numerical calculations consisted of the diagonalization of the few-electron-hole Hamiltonian matrices in the full configuration-interaction basis, with the simultaneous resolution of the conserved orbital and spin quantum numbers.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 173-176
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:: Taube, A.
Gierałtowska, S.
Gutt, T.
Małachowski, T.
Pasternak, I.
Wojciechowski, T.
Rzodkiewicz, W.
Sawicki, M.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/2048120.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 77.55.dj
77.22.Jp
73.40.Qv
81.15.Gh
Opis:: Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 696-698
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja