- Tytuł:
- Origin of point defects in β-Ga₂O₃ single crystals doped with Mg²⁺ ions
- Autorzy:
-
Luchechko, A.
Vasyltsiv, V.
Kostyk, L.
Tsvetkova, O. - Powiązania:
- https://bibliotekanauki.pl/articles/1052715.pdf
- Data publikacji:
- 2018-04
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.-y
78.20.-e
72.40.+w - Opis:
- Optical absorption and photoconductivity investigations of nominal pure and Mg²⁺ doped β-Ga₂O₃ single crystals have been carried out. Additional bands in the UV (3.6-4.6 eV) and near-IR (0.4-1.2 eV) spectral regions were found in optical absorption and photoconductivity spectra. A correlation between Mg²⁺ doping, annealing in oxygen atmosphere as well as optical absorption and photoconductivity bands were established in gallium oxide. Electronic transitions from shallow traps and F-centers were observed in the IR spectral region (0.4-1.2 eV). Absorption and photoconductivity in the UV region are related to deep acceptor levels created by native defects and impurities.
- Źródło:
-
Acta Physica Polonica A; 2018, 133, 4; 811-815
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki