- Tytuł:
- Dopants in Semiconductors Studied by Perturbed Angular Correlation
- Autorzy:
-
Bartels, J.
Lorenz, K.
Ruske, F.
Tessema, G.
Vianden, R. - Powiązania:
- https://bibliotekanauki.pl/articles/2028909.pdf
- Data publikacji:
- 2001-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Vv
61.72.Tt
81.40.Ef
76.80.+y - Opis:
- The γ-γ perturbed angular correlation technique is a very powerful tool for the investigation of dopant incorporation and damage recovery after implantation in semiconductors. The basic principles of the technique will be introduced followed by a discussion of its strengths and limitations. Examples of its application will be given, ranging from cavities in silicon, effects of uniaxial stress on acceptor-donor pairs in silicon to damage recovery in nitride semiconductors like GaN.
- Źródło:
-
Acta Physica Polonica A; 2001, 100, 5; 585-602
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł