Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Liu, J.-Q." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-2 z 2
    Tytuł:
    A Temperature Error Correction Method for a Thermometer Screen
    Autorzy:
    Yang, J.
    Liu, Q.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032598.pdf
    Data publikacji:
    2017-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    temperature error
    surface air temperature
    computational fluid dynamics
    screen
    Opis:
    Due to solar radiation exposure, air flowing inside a thermometer screen may produce a measurement error of 0.8°C or higher. To improve the air temperature observation accuracy, a temperature error correction method is proposed. The correction method is based on a computational fluid dynamics method and a genetic algorithm method. The computational fluid dynamics method is implemented to analyze and calculate the temperature errors of a screen under various environmental conditions. Then, a temperature error correction equation is obtained by fitting the computational fluid dynamics results using the genetic algorithm method. To verify the performance of the correction equation the screen and an aspirated temperature measurement platform are characterized in the same environment to conduct the intercomparison. The aspirated temperature measurement platform serves as an air temperature reference. The mean temperature error given by measurements is 0.77°C, and the mean temperature error given by correction equation is 0.79°C. This correction equation allows the temperature error to be reduced by approximately 97.5%.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 4; 1301-1305
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excitons and Phonons in GaN. Magnetooptical and Spatially Resolved Investigations
    Autorzy:
    Hoffmann, A.
    Eckey, L.
    Siegle, H.
    Kaschner, A.
    Christen, J.
    Bertram, F.
    Liu, Q. K. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968986.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    78.40.Fy
    78.45.+h
    Opis:
    A comprehensive study of the direct photoluminescence from free-exciton states in GaN using polarization-dependent and magnetooptical measurements is presented. We measured and identified fine-structure splittings in the n=1 state of the A-exciton. From the magnetoluminescence data obtained in fields up to 15 T we determined the g-values of the conduction and valence bands parallel and perpendicular to the c-axis. Self-organized hexagonal GaN pyramids of 5 μm width and covered by six {11̲01} side facets were investigated by spatially resolved cathodoluminescence and micro-Raman spectroscopy. Beside a narrow luminescence peak at 355 nm, originating from the 2 μm thick GaN layer, an additional broad luminescence band was observed from the GaN pyramids around a wavelength of 357 nm. A strong energy shift is found along the {11̲01} pyramidal facets and directly visualized by monochromatic cathodoluminescence images and line scans. In GaN epilayers grown on GaAs substrates a series of sharp modes in the range between 60 cm$\text{}^{-1}$ and 250 cm$\text{}^{-1}$ for temperatures below 100 K was found. The intensities of these modes increased drastically with decreasing temperature. Raman excitation spectra showed a maximum between 514.5 nm and 568 nm. A comparison of spatially resolved investigations with that of intentionally doped GaN epilayers showed that the in-diffusion of As from the substrate plays an important role. Raman spectra as a function of external fields, like magnetic field and hydrostatic pressure, gave additional information about the defect type and the underlying scattering mechanism.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 125-137
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-2 z 2

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies