Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Lawniczak, A." wg kryterium: Autor


Wyświetlanie 1-6 z 6
Tytuł:
Chemical Shifts at K-Absorption Edges of Transition Metals Admixed To ZnS and ZnSe
Autorzy:
Iwanowski, R. J.
Ławniczak-Jabłońska, K.
Traverse, A.
Powiązania:
https://bibliotekanauki.pl/articles/1963385.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
Opis:
This paper gives the experimental evidence of systematic X-ray K-absorption edge studies in an effort to analyse the effect of cation chemical shift in the group of compounds type Zn$\text{}_{1-x}$M$\text{}_{x}$A (M = Mn, Fe, Co, Ni; A = S, Se). The observed chemical shift was found practically independent of the choice of anion, whereas it revealed a noticeable decrease when passing from Mn to Zn. The effect was ascribed to the change of the 3d shell occupation. The calculations of the effective cation charge (based on the theoretical approach of Kitamura and Chen, 1991) have shown that in the case of transition metals admixed to ZnS and ZnSe there is a contribution of the 3d electrons to the overall charge transfer, which indicates that the ability of 3d electrons to participate in predominantly ionic bond decreases with 3d orbit filling.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 803-808
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of the Local Environment of Mn Ions Implanted in GaSb
Autorzy:
Wolska, A.
Lawniczak-Jablonska, K.
Klepka, M.
Barcz, A.
Hallen, A.
Arvanitis, D.
Powiązania:
https://bibliotekanauki.pl/articles/1538865.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
61.72.U-
61.05.cj
Opis:
The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 286-292
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Isoscattering Microwave Networks - The Role of the Boundary Conditions
Autorzy:
Ławniczak, M.
Bauch, S.
Sawicki, A.
Kuś, M.
Sirko, L.
Powiązania:
https://bibliotekanauki.pl/articles/1399050.pdf
Data publikacji:
2013-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
05.45.Ac
Opis:
The recent paper by Hul et al. (Phys. Rev. Lett. 109, 040402 (2012)}, see Ref. [7]) addresses an important mathematical problem whether scattering properties of wave systems are uniquely connected to their shapes? The analysis of the isoscattering microwave networks presented in this paper indicates a negative answer to this question. In this paper the sensitivity of the spectral properties of the networks to boundary conditions is tested. We show that the choice of the proper boundary conditions is extremely important in the construction of the isoscattering networks.
Źródło:
Acta Physica Polonica A; 2013, 124, 6; 1078-1081
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental Determination of the Autocorrelation Function of Level Velocities for Microwave Networks Simulating Quantum Graphs
Autorzy:
Ławniczak, M.
Borkowska, A.
Hul, O.
Bauch, S.
Sirko, L.
Powiązania:
https://bibliotekanauki.pl/articles/1492514.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.45.Mt
03.65.Nk
Opis:
The autocorrelation function c(x) of level velocities is studied experimentally. The measurements were performed for microwave networks simulating quantum graphs. One and two ports measurements of the scattering matrix Ŝ necessary for determining c(x) were realized for the networks possessing 5 and 6 vertices, respectively. The network with six vertices was fully connected. In the case of the networks with five vertices, additionally to the fully connected configuration, we measured the networks without the bond connecting input/output vertices. The obtained experimental results besides the autocorrelation function of level velocities, also the nearest-neighbor spacing distribution and parametric velocities distribution are compared to the predictions of random matrix theory and numerical results.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-185-A-190
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Absorption Studies of Ge Layers Buried in Silicon Crystal
Autorzy:
Demchenko, I. N.
Ławniczak-Jabłońska, K.
Zhuravlev, K. S.
Piskorska, E.
Nikiforov, A. I.
Welter, E.
Powiązania:
https://bibliotekanauki.pl/articles/2030656.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
78.70.Dm
81.05.Gc
Opis:
Polarization-dependent X-ray absorption spectroscopy was used to study the local microstructure of Ge layers buried in silicon. The layers with thickness from 6 to 20 monolayers of Ge were grown by molecular beam epitaxy on Si substrate and were covered by Si (20 nm). To investigate the morphology of grown structures, X-ray absorption near edge structure and extended X-ray absorption fine structure analysis of the Ge K-edge was done. The performed qualitative analysis proves that X-ray absorption spectra are very sensitive to the local order in the formed structures and are sources of unique information about morphology of the buried Ge layers. Using these techniques we were able to observe the changes in atomic order around the Ge atoms in investigated buried layers and compare the formed atomic order with that in crystalline Ge. A substantial increase in intensity, broadening and chemical shift of the X-ray absorption near edge structure spectrum for 8 ML were observed. It can be related to the increase in density of electron states caused by increase in the localization of the states due to potential appearing at the Ge island boundaries and indicated the formation of quantum dots. The observed in-plane modulations of radial distribution and out-of-plane for different layers were discussed.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 709-717
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
XANES Studies of Mn K and $L_{3,2}$ Edges in the (Ga,Mn)As Layers Modified, by High Temperature Annealing
Autorzy:
Wolska, A.
Lawniczak-Jablonska, K.
Klepka, M.
Jakieła, R.
Demchenko, I.
Sadowski, J.
Holub-Krappe, E.
Persson, A.
Arvanitis, D.
Powiązania:
https://bibliotekanauki.pl/articles/1812244.pdf
Data publikacji:
2008-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
75.50.Pp
Opis:
$Ga_{1-x}Mn_xAs$ is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper $Ga_{1-x}Mn_xAs$ samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.
Źródło:
Acta Physica Polonica A; 2008, 114, 2; 357-366
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies