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Wyszukujesz frazę "Kim, Y.-K." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Structural and Optical Properties of Hydrothermally Synthesized ZnO and $Zn_{0.99}O:Eu^{3+}$ Powders
Autorzy:
Park, K.
Hakeem, D.
Kim, J.
Kim, Y.
Kim, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398243.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Hx
78.55.Et
Opis:
The structural and optical properties of the ZnO and $Zn_{0.99}O:Eu^{3+}$ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of $Eu^{3+}. The photoluminescence properties of annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders were substantially improved by controlling the synthesis temperature. The annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 902-906
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
Autorzy:
Kim, M.
Jin, S.
Choi, H.
Kim, G.
Yim, K.
Kim, S.
Nam, G.
Yoon, H.
Kim, Y.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505152.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
81.15.Gh
Opis:
A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 875-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of NdBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ Superconducting Thin Films on SrTiO$\text{}_{3}$(100) and LaSrGaO$\text{}_{4}$(100) Substrates
Autorzy:
Park, J.-C.
Ha, D. H.
Kim, I.-S.
Park, Y.K.
Powiązania:
https://bibliotekanauki.pl/articles/1964239.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.76.Bz
Opis:
NdBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ superconducting thin films were grown on SrTiO$\text{}_{3}$(100) and LaSrGaO$\text{}_{4}$(100) substrates by off-axis rf sputtering and pulsed laser deposition. The effects of several deposition parameters, e.g. gas pressure, substrate temperature and energy density were studied. Thin films grown by off-axis rf sputtering were highly c-axis oriented, but those by pulsed laser deposition were predominantly a-axis oriented under our deposition conditions. However, the c-axis oriented portion for the films grown by pulsed laser deposition was increased by increasing the temperature above 800°C. T$\text{}_{c(zero)}$ was 87 K and 83 K for the c- and a-axis oriented films respectively. The critical current density of c-axis oriented films was 10$\text{}^{6}$-10$\text{}^{7}$ A/cm$\text{}^{2}$ below 60 K.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 105-114
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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