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Wyszukujesz frazę "Kim, Y. D." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Structural and Optical Properties of Hydrothermally Synthesized ZnO and $Zn_{0.99}O:Eu^{3+}$ Powders
Autorzy:
Park, K.
Hakeem, D.
Kim, J.
Kim, Y.
Kim, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398243.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Hx
78.55.Et
Opis:
The structural and optical properties of the ZnO and $Zn_{0.99}O:Eu^{3+}$ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of $Eu^{3+}. The photoluminescence properties of annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders were substantially improved by controlling the synthesis temperature. The annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 902-906
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Study on Discharge Characteristics by Using MF and RF Power in Remote Dielectric Barrier Discharge
Autorzy:
Kim, D.
Shim, Y.
Kim, H.
Han, J.
Powiązania:
https://bibliotekanauki.pl/articles/1398758.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.77.Bn
Opis:
We have developed an atmospheric pressure plasma apparatus of remote dielectric barrier discharge (RDBD) applicable for a large area. We have systematically studied the characteristics of medium frequency (MF, 40 kHz) and radio frequency (RF, 13.56 MHz) discharge using an optical emission spectroscope. Nitrogen (N₂) and argon (Ar) gases were used in the MF and RF discharge excitation, respectively, in a mixture with clean dry air (CDA). The peak of oxygen radical (O*₂) appears at 259.3 nm when the RDBD is employed. Furthermore, intensive peaks are observed at gas ratios of N₂:CDA=100:1 in MF excitation and at gas ratios of Ar:CDA=70:0.5 in RF discharge excitation. On the other hand, the contact angle shows about 5° in PET samples after the RDBD treatment using the RF and MF discharge excitation. Surface analyses of polyethylene terephthalate (PET) samples were carried out using an atomic force microscope and X-ray photoelectron spectroscope.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 707-710
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
Autorzy:
Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, D.
Kim, M.
Kwon, Y.
Choe, J.
Kim, J.
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1535820.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.37.Ps
78.55.Cr
78.67.Hc
Opis:
The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 673-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
Autorzy:
Kim, M.
Jin, S.
Choi, H.
Kim, G.
Yim, K.
Kim, S.
Nam, G.
Yoon, H.
Kim, Y.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505152.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
81.15.Gh
Opis:
A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 875-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of NdBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ Superconducting Thin Films on SrTiO$\text{}_{3}$(100) and LaSrGaO$\text{}_{4}$(100) Substrates
Autorzy:
Park, J.-C.
Ha, D. H.
Kim, I.-S.
Park, Y.K.
Powiązania:
https://bibliotekanauki.pl/articles/1964239.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.76.Bz
Opis:
NdBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ superconducting thin films were grown on SrTiO$\text{}_{3}$(100) and LaSrGaO$\text{}_{4}$(100) substrates by off-axis rf sputtering and pulsed laser deposition. The effects of several deposition parameters, e.g. gas pressure, substrate temperature and energy density were studied. Thin films grown by off-axis rf sputtering were highly c-axis oriented, but those by pulsed laser deposition were predominantly a-axis oriented under our deposition conditions. However, the c-axis oriented portion for the films grown by pulsed laser deposition was increased by increasing the temperature above 800°C. T$\text{}_{c(zero)}$ was 87 K and 83 K for the c- and a-axis oriented films respectively. The critical current density of c-axis oriented films was 10$\text{}^{6}$-10$\text{}^{7}$ A/cm$\text{}^{2}$ below 60 K.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 105-114
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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