- Tytuł:
- Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs
- Autorzy:
-
Kundrotas, J.
Čerškus, A.
Valušis, G.
Lachab, M.
Khanna, S.
Harrison, P.
Linfield, E. - Powiązania:
- https://bibliotekanauki.pl/articles/1813382.pdf
- Data publikacji:
- 2008-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.-m
78.67.De
71.30.+h - Opis:
- We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3×$10^{12} cm^{-2}$.
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 3; 963-966
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł