- Tytuł:
- Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect
- Autorzy:
-
Karpińska, K.
Łusakowski, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1886537.pdf
- Data publikacji:
- 1991-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 72.20.Jv
- Opis:
- A detailed investigation of current-voltage (I- V)characteristics of semi-insulating GaAs sample was performed in the vicinity of room temperature. The sample with 300 K resistivity of 2 x 10$\text{}^{7}$ Ω cm was supplied with guard-ring electrodes which allowed the elimination of surface currents. The observed characteristics started with an ohmic part which was followed by a superlinear current on voltage dependence. At a threshold voltage V$\text{}_{th}$ which corresponds to the electric field of about 2 kV/cm the current increased abruptly by a few orders of magnitude. The value of V$\text{}_{th}$ increased with the temperature. It is proposed that the observed shape of the I-V curve is caused by the filling of the EL2 level with injected electrons heated by the electric field.
- Źródło:
-
Acta Physica Polonica A; 1991, 79, 2-3; 281-285
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł