Autor: Johnson, N. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Acousto-Optic Tunable Filters for Imaging Applications in the 2-4 μm with Low RF Drive Power
Autorzy:: Valle, S.
Ward, J.
Pannell, C.
Johnson, N.
Powiązania:: https://bibliotekanauki.pl/articles/1383267.pdf
Data publikacji:: 2015-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.20.-x
78.20.hb
62.40.+i
Opis:: The $λ^{2}$ dependence on acoustic field intensity (and hence RF drive power) can render large aperture acousto-optic tunable filters impractical for many applications beyond about 2 μm. One potential technique for reducing the RF drive-power requirement is to configure an acousto-optic tunable filter such that the interaction region is at acoustic resonance. We describe an acousto-optic tunable filter that operates at resonance and present an analysis of the predicted performance. In addition, we address the practical issues in deploying such a scheme. Finally, we present results of a prototype "resonant acousto-optic tunable filter" operating in the 1-2 μm region.
Źródło:: Acta Physica Polonica A; 2015, 127, 1; 58-59
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Defects and Defect Reactions in Semiconductor Nitrides
Autorzy:: Van de Walle, C. G.
Neugebauer, J.
Stampfl, C.
McCluskey, M. D.
Johnson, N. M.
Powiązania:: https://bibliotekanauki.pl/articles/2011140.pdf
Data publikacji:: 1999-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Bb
61.72.Ji
61.82.Fk
71.55.Eq
Opis:: We report a comprehensive investigation of native point defects and impurities in GaN, AlN, and AlGaN alloys, with the goal of understanding doping limitations in nitride semiconductors. Unintentional incorporation of impurities (mainly oxygen) explains the tendency of nitride semiconductors to exhibit n-type conductivity. Silicon is the n-type dopant of choice; it remains shallow in AlGaN up to high Al content, while oxygen undergoes a DX transition. Experimental evidence for DX centers will be discussed. In p-type material, Mg doping is hindered by an increase in ionization energy with increasing Al content in AlGaN, and by nitrogen vacancies acting as compensating centers. Complex formation between magnesium and oxygen and between magnesium and nitrogen vacancies will be discussed.
Źródło:: Acta Physica Polonica A; 1999, 96, 5; 613-627
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Influence of Yb on Valence Band Density of States of CdYbTe and PbYbTe - a Resonant Photoemission Study
Autorzy:: Szamota-Sadowska, K.
Kowalski, B. J.
Guziewicz, E.
Orłowski, B. A.
Sadowski, J.
Gołacki, Z.
Ghijsen, J.
Johnson, R. L.
Belkhou, R.
Radosavkič, D.
Martinotti, D.
Barrett, N.
Guillot, C.
Powiązania:: https://bibliotekanauki.pl/articles/1952185.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Vv
Opis:: Photoemission measurements using synchrotron radiation were performed on PbYbTe (bulk crystal) and CdYbTe (MBE thin film). The resonant enhancement of the photoemission was applied for investigation of the contribution of Yb 4f electrons to the valence band. The set of the energy distribution curves was collected for energies in the region close to the 4d-4f Fano transition. The Yb 4f$\text{}^{14}$ were observed at the binding energies close to the edge of the valence band while the 4f$\text{}^{13}$ states were revealed deep in the valence band.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 943-946
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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