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    Wyświetlanie 1-9 z 9
    Tytuł:
    Chaotic Time-Reversed Acoustics: Sensitivity οf the Loschmidt Echo to Perturbations
    Autorzy:
    Taddese, B.
    Johnson, M.
    Hart, J.
    Antonsen, T.
    Ott, E.
    Anlage, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1585110.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    03.55.Kk
    05.45.Mt
    43.58.+z
    43.60.+d
    Opis:
    We experimentally demonstrate a new acoustic sensor based on the concept of quantum mechanical scattering fidelity and the Loschmidt echo applied to classical acoustic waves in air. The sensor employs a one-recording-channel time-reversal mirror that exploits spatial reciprocity to sensitively measure the classical analog of the scattering fidelity of an enclosed region. The experiments are carried out in a stairwell using a simple speaker and microphone. The input is a 7.0 kHz signal that is amplitude modulated with a 1 ms long pulse. We examine the sensitivity of the time-reversed reconstructed pulse to phase noise, long term drift, and to typical perturbations caused by the rotation of an object in the scattering environment.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 729-732
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Light Scattering Investigations of Magnetic Anisotropies in Ultrathin Epitaxial Co Films
    Autorzy:
    Hillebrands, B.
    Krams, P.
    Fassbender, J.
    Mathieu, C.
    Güntherodt, G.
    Jungblut, R.
    Johnson, M. T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1861065.pdf
    Data publikacji:
    1994-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.30.Pd
    75.30.Ds
    78.35.+c
    Opis:
    Using Brillouin light scattering, the properties of magnetic anisotropies in ultrathin epitaxial Co films grown on single-crystal Cu substrates are investigated. All relevant magnetic anisotropy contributions are determined, in situ in an ultrahigh vacuum system for the (001)-oriented films, as well as ex situ for other film orientations, which are covered with a Cu cap layer. For (001)-oriented films we find a large in-plane anisotropy contribution of fourfold symmetry. For this contribution the volume and the surface part cancel to zero at the same thickness as found for the onset of ferromagnetic order. This finding is indicative for a stabilization of ferromagnetic order in Co/Cu(001) by in-plane anisotropy contributions. In (1 1 13)-oriented films, which are composed of (001)-terraces aligned along the [11̅0]-direction and spaced by 6.5 atomic distances, an additional uniaxial in-plane anisotropy contribution is found which is identified as being of magneto-elastic origin. For (110)-oriented films three ranges of thickness dependence of the in-plane and out-of-plane anisotropy contributions are found which correlate in the thin-film regime with the growth properties. (111)-oriented films show a linear dependence of the perpendicular anisotropy on the reciprocal film thickness over the full investigated thickness range of 2 to 20 Å.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 1; 179-193
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defects and Defect Reactions in Semiconductor Nitrides
    Autorzy:
    Van de Walle, C. G.
    Neugebauer, J.
    Stampfl, C.
    McCluskey, M. D.
    Johnson, N. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011140.pdf
    Data publikacji:
    1999-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Bb
    61.72.Ji
    61.82.Fk
    71.55.Eq
    Opis:
    We report a comprehensive investigation of native point defects and impurities in GaN, AlN, and AlGaN alloys, with the goal of understanding doping limitations in nitride semiconductors. Unintentional incorporation of impurities (mainly oxygen) explains the tendency of nitride semiconductors to exhibit n-type conductivity. Silicon is the n-type dopant of choice; it remains shallow in AlGaN up to high Al content, while oxygen undergoes a DX transition. Experimental evidence for DX centers will be discussed. In p-type material, Mg doping is hindered by an increase in ionization energy with increasing Al content in AlGaN, and by nitrogen vacancies acting as compensating centers. Complex formation between magnesium and oxygen and between magnesium and nitrogen vacancies will be discussed.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 5; 613-627
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fano Resonance Investigation of PbTe Layers Containing Eu and Gd Ions
    Autorzy:
    Orlowski, B.
    Osinniy, V.
    Dziawa, P.
    Pietrzyk, M.
    Kowalski, B.
    Taliashvili, B.
    Story, T.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812243.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    The Fano resonance photoemission studies of Gd/(Pb, Gd)Te layers using synchrotron radiation were carried out and the electronic structure parameters like binding energies of $Gd^{3+}$ 4f and 5p shells, resonance and antiresonance energies for $Gd^{3+}$ were determined. The presence of $Eu^{3+}$ ions was observed in the (Pb, Eu)Te and (Eu, Gd)Te layers grown by MBE technique. The comparison of data for (Pb, Gd)Te compound with corresponding data for (Eu, Gd)Te and (Pb, Eu)Te layers indicates that we are not able to distinct the $Eu^{3+}4f$ and $Gd^{3+}4f$ electrons contribution to the valence band photoemission spectra because of small content od Gd and similar binding energy values. The key parameters allowing to prove exactly the presence of either $Eu^{3+}$ or $Gd^{3+}$ are the resonance and antiresonance energies which are significantly different for these ions and equal to 143 eV/137 eV and 150 eV/142 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 351-356
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Band Structure of Mn/ZnTe Studied, by Angle-Resolved Photoelectron Spectroscopy
    Autorzy:
    Kowalski, B. J.
    Orlowski, B. A.
    Pietrzyk, M.
    Kaczor, P.
    Kopalko, K.
    Mickievicius, S.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044491.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.23.-k
    Opis:
    The electronic band structure of Mn/ZnTe(110) (1×1) has been studied by angle-resolved photoelectron spectroscopy. The sets of spectra were acquired for the clean surface and after in situ deposition of 0.4 ML of Mn, in order to compare the band structures and to reveal changes brought about by the presence of Mn. The experimental band structure diagram of Mn/ZnTe along theΓ-K direction in the Brillouin zone has been derived from the experimental data. Indications of interaction between the Mn 3d states and sp$\text{}^{3}$ bands of the semiconductor are discussed.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 735-740
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors
    Autorzy:
    Pietrzyk, M.
    Kowalski, B.
    Orlowski, B.
    Knoff, W.
    Story, T.
    Dobrowolski, W.
    Slynko, V.
    Slynko, E.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538868.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    71.20.Be
    Opis:
    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 293-295
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
    Autorzy:
    Pietrzyk, M. A.
    Kowalski, B. J.
    Orłowski, B. A.
    Knoff, W.
    Osinniy, V.
    Kowalik, I. A.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047678.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 275-281
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fano Resonance of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ in (Eu,Gd)Te MBE Layers
    Autorzy:
    Orlowski, B. A.
    Kowalski, B. J.
    Dziawa, P.
    Pietrzyk, M.
    Mickievicius, S.
    Osinniy, V.
    Taliashvili, B.
    Kowalik, I. A.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044511.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ ions to the valence band. The resonant and antiresonant photon energies of Eu$\text{}^{2+}$ ions were found as equal to 141 V and 132 eV, respectively and for Eu$\text{}^{3+}$ ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu$\text{}^{2+}$4f electrons was found at the valence band edge while for Eu$\text{}^{3+}$ it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 803-807
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Femtosecond X-ray Absorption Spectroscopy οf a Light-Driven Spin-Crossover Process
    Autorzy:
    Milne, C.
    Pham, V.
    Gawelda, W.
    Nahhas, A.
    van der Veen, R.
    Johnson, S.
    Beaud, P.
    Ingold, G.
    Borca, C.
    Grolimund, D.
    Abela, R.
    Chergui, M.
    Bressler, Ch.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539083.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Dm
    75.30.Wx
    Opis:
    Understanding the initial steps during ultrafast molecular reactions involving large spin state changes is a vital goal in structural dynamics research. These involve knowledge of the geometric structure of the system. Ultrafast X-ray absorption spectroscopy with 50-100 picosecond time resolution establishes the geometric structure of the short-lived (τ = 0.6 ns) high spin state. Here we focus on time-resolved X-ray absorption studies with 160-200 fs temporal resolution to monitor the structural evolution in this spin-conversion process.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 391-393
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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