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Wyszukujesz frazę "Jasiński, P." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Chemical Interaction between Perovskite $La_{0.6}Sr_{0.4}FeO_3$ and Super-Ionic $Zr_{0.84}Y_{0.16}O_x$
Autorzy:
Gazda, M.
Kusz, B.
Płończak, P.
Molin, S.
Jasinski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1812289.pdf
Data publikacji:
2008-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.-t
81.15.-z
82.47.Ed
Opis:
Perovskites are materials of very versatile properties. They may be used in various ways and structures. In this work the results of investigation of the $Zr_{0.84}Y_{0.16}O_x$ electrolyte on $La_{0.6}Sr_{0.4}FeO_3$ perovskite support are presented. The perovskite support was fabricated by iso-axially die-pressing of $La_{0.6}Sr_{0.4}FeO_3$ powders and sintering at 1150°C. The $Zr_{0.84}Y_{0.16}O_x$ layer was deposited on $La_{0.6}Sr_{0.4}FeO_3$ by a combination of colloidal suspension and polymer precursor methods. In this way the dense electrolyte layer was prepared at as low temperature as 400°C. This method may be also useful for high-$T_c$ superconductor layers deposition. The chemical interaction between the electrolyte layer and perovskite support was investigated by X-ray diffraction. It was shown that no reaction occurs between cathode and electrolyte until 900°C. Above 1200°C, parameters of the $La_{0.6}Sr_{0.4}FeO_3$ unit cell increase. It suggests that the reaction between $Zr_{0.84}Y_{0.16}O_x$ and $La_{0.6}Sr_{0.4}FeO_3$ is accompanied by substitutional changes in the $La_{0.6}Sr_{0.4}FeO_3$.
Źródło:
Acta Physica Polonica A; 2008, 114, 1; 135-141
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Resonance Imaging Analysis of Moving Fronts in Floating Dosage Forms
Autorzy:
Kulinowski, P.
Dorożyński, P.
Jachowicz, R.
Jasiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/2043429.pdf
Data publikacji:
2005-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.61.-c
Opis:
An application of magnetic resonance imaging in the field of pharmaceutical technology is presented in this paper. The analysis of diffusion and swelling fronts was carried out for four floating dosage forms using magnetic resonance imaging. The influence of polymer viscosity, its concentration, and type of applied dissolution media on the area of moving fronts was investigated.
Źródło:
Acta Physica Polonica A; 2005, 108, 1; 155-160
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Antisites Defects in GaP
Autorzy:
Jasiński, J.
Kamińska, M.
Palczewska, M.
Jurkiewicz-Wagner, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929675.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
ESR, optical, and transport measurements were done on neutron-irradiated GaP crystals subjected to thermal annealing. The behavior of two dominant paramagnetic defects: phosphorus antisite PP4 and WA1 [1] was followed. ESR signal similar to WA1 was earlier attributed to the defect related with gallium antisite [2]. Our thermal annealing experiments supported such attribution. Apart from that, the obtained results indicated that two dominant absorption bands in neutron-irradiated GaP with maxima at 0.79 and 1.13 eV [1] were not connected with PP$\text{}_{4}$ or WA1 defects. However, one of these paramagnetic defects (or two of them) were responsible for hopping transport in n-irradiated GaP crystals.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 579-582
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs
Autorzy:
Korona, K. P.
Jasiński, J.
Kurpiewski, A.
Kamińska, M.
Jagadish, C.
Tan, H. H.
Krotkus, A.
Marcinkevicius, S.
Powiązania:
https://bibliotekanauki.pl/articles/1951117.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
72.20.Jv
72.80.Ey
Opis:
Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10$\text{}^{14}$ to 5×10$\text{}^{16}$ cm$\text{}^{-2}$. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 851-854
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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