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    Wyświetlanie 1-3 z 3
    Tytuł:
    Interrelation of Microstructure and Corrosion Resistance in Biodegradable Magnesium Alloys with Aluminum, Lithium and Rare Earth Additions
    Autorzy:
    Minárik, P.
    Landa, M.
    Lesná, I.
    Zemková, M.
    Jablonská, E.
    Hadzima, B.
    Janeček, M.
    Král, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402061.pdf
    Data publikacji:
    2015-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.-t
    82.45.Bb
    87.85.J-
    43.40.Le
    Opis:
    The influence of equal channel angular pressing and rotary swaging on the microstructure and corrosion resistance was investigated in three magnesium alloys with the addition of aluminum, lithium and rare earth elements - AE21, AE42 and LAE442. The processing resulted in grain refinement in all cases; nevertheless, the effect on the corrosion resistance was ambiguous. A continuous increase of the polarization resistance during the gradual equal channel angular pressing was observed in the AE42 and LAE442 alloys, whereas there was almost no effect in the AE21 alloy. The rotary swaging of AE42 resulted in a decrease of polarization resistance. The increase of polarization resistance in the alloys with the higher concentration of alloying elements was caused by the combined effect of grain refinement and better dispersion of particles in the matrix thanks to shear deformation during equal channel angular pressing. In the AE42 alloy, the increase of the corrosion resistance after equal channel angular pressing was also proven by chemical analysis of the solution and acoustic emission detection. This beneficial effect was not observed when the concentration of alloying elements was lower or when the deformation mode was different from shearing.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 4; 491-496
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray Absorption Studies of Ge Layers Buried in Silicon Crystal
    Autorzy:
    Demchenko, I. N.
    Ławniczak-Jabłońska, K.
    Zhuravlev, K. S.
    Piskorska, E.
    Nikiforov, A. I.
    Welter, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030656.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ey
    78.70.Dm
    81.05.Gc
    Opis:
    Polarization-dependent X-ray absorption spectroscopy was used to study the local microstructure of Ge layers buried in silicon. The layers with thickness from 6 to 20 monolayers of Ge were grown by molecular beam epitaxy on Si substrate and were covered by Si (20 nm). To investigate the morphology of grown structures, X-ray absorption near edge structure and extended X-ray absorption fine structure analysis of the Ge K-edge was done. The performed qualitative analysis proves that X-ray absorption spectra are very sensitive to the local order in the formed structures and are sources of unique information about morphology of the buried Ge layers. Using these techniques we were able to observe the changes in atomic order around the Ge atoms in investigated buried layers and compare the formed atomic order with that in crystalline Ge. A substantial increase in intensity, broadening and chemical shift of the X-ray absorption near edge structure spectrum for 8 ML were observed. It can be related to the increase in density of electron states caused by increase in the localization of the states due to potential appearing at the Ge island boundaries and indicated the formation of quantum dots. The observed in-plane modulations of radial distribution and out-of-plane for different layers were discussed.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 709-717
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    XANES Studies of Mn K and $L_{3,2}$ Edges in the (Ga,Mn)As Layers Modified, by High Temperature Annealing
    Autorzy:
    Wolska, A.
    Lawniczak-Jablonska, K.
    Klepka, M.
    Jakieła, R.
    Demchenko, I.
    Sadowski, J.
    Holub-Krappe, E.
    Persson, A.
    Arvanitis, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812244.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Dm
    75.50.Pp
    Opis:
    $Ga_{1-x}Mn_xAs$ is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper $Ga_{1-x}Mn_xAs$ samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 357-366
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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