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Wyświetlanie 1-4 z 4
Tytuł:
Investigations of Au Segregation in AuNi Alloys by the Line Shape Analysis of Photoelectron Spectra
Autorzy:
Lesiak, B.
Biliński, A.
Jóźwik}, A.
Powiązania:
https://bibliotekanauki.pl/articles/2046828.pdf
Data publikacji:
2006-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Bg
68.35.Dv
79.60.-i
Opis:
The surface segregation of Au in Au5Ni95 polycrystalline alloy is studied applying the line shape analysis, known as the fuzzy k-nearest neighbour rule, to the selected X-ray photoelectron and X-ray induced Auger spectra. Each line, characterised by the kinetic electron energy exhibited in the particular transition, samples the depth described by the mean escape depth depending on the inelastic mean free path of electron in the investigated material and the geometry of the measurement. The following electron transitions in the electron kinetic energy range 216.6-1486.6 eV are analysed: Au N$\text{}_{5}$N$\text{}_{67}$V, Ni 2p, Ni L$\text{}_{2}$M$\text{}_{23}$M$\text{}_{45}$-Ni L$\text{}_{3}$M$\text{}_{45}$M$\text{}_{45}$, Au 4d, Au 4f and the valence band transitions (overlapping Au 5d6s and Ni 3d4s transitions). The results of the quantitative analysis using the fuzzy k-nearest neighbour rule are compared to the results of quantitative analysis by the multiline approach which applies the Au 4f and Ni 2p photoelectron transitions. Both methods demonstrate Au surface segregation starting at the temperature above 200ºC. The line shape analysis was shown to be applicable for quantification of the surface region with possibility of investigating the in-depth non-uniform concentration profiles.
Źródło:
Acta Physica Polonica A; 2006, 109, 6; 701-714
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN
Autorzy:
Pągowska, K.
Ratajczak, R.
Stonert, A.
Turos, A.
Nowicki, L.
Sathish, N.
Jóźwik, P.
Muecklich, A.
Powiązania:
https://bibliotekanauki.pl/articles/1504096.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.55.Ln
68.35.Dv
Opis:
A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × $10^{12}$ to 1 × $10^{17}$ at./$cm^2$. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 $MeV^4He$ beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 153-155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Grain Size on Mechanical Properties of Irradiated Mono- and Polycrystalline $MgAl_2O_4$
Autorzy:
Jagielski, J.
Piatkowska, A.
Aubert, P.
Labdi, S.
Maciejak, O.
Romaniec, M.
Thomé, L.
Jozwik, I.
Debelle, A.
Wajler, A.
Boniecki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1503999.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.82.Ms
62.20.Qp
68.37.Ps
Opis:
The influence of the size of crystalline regions on mechanical properties of irradiated oxides has been studied using a magnesium aluminate spinel $MgAl_2O_4$. The samples characterized by different dimensions of crystalline domains, varying from sintered ceramics with grains of few micrometers in size up to single crystals, were used in the experiments. The samples were irradiated at room temperature with 320 keV $Ar^{2+}$ ions up to fluences reaching 5 × $10^{16} cm^{-2}$. Nanomechanical properties (nanohardness and Young's modulus) were measured by using a nanoindentation technique and the resistance to crack formation by measurement of the total crack lengths made by the Vickers indenter. The results revealed several effects: correlation of nanohardness evolution with the level of accumulated damage, radiation-induced hardness increase in grain-boundary region and significant improvement of material resistance to crack formation. This last effect is especially surprising as the typical depth of cracks formed by Vickers indenter in unirradiated material exceeds several tens of micrometers, i.e. is more than hundred times larger than the thickness of the modified layer.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 118-121
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Crystal Lattice Deformation by Ion Channeling
Autorzy:
Jóźwik, P.
Sathish, N.
Nowicki, L.
Jagielski, J.
Turos, A.
Kovarik, L.
Arey, B.
Shutthanandan, S.
Jiang, W.
Dyczewski, J.
Barcz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400434.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.85.+p
68.55.Ln
02.70.Uu
68.37.Og
Opis:
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded $SrTiO_3$ samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 828-830
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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