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Wyświetlanie 1-4 z 4
Tytuł:
Fermi Surface-Brillouin Zone Interactions in 2/1-2/1-2/1 Bergman-Type Approximant $Na_{27}Au_{27}Ga_{31}$
Autorzy:
Mizutani, U.
Sato, H.
Inukai, M.
Zijlstra, E.
Lin, Q.
Corbett, J.
Miller, G.
Powiązania:
https://bibliotekanauki.pl/articles/1373341.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.23.Ft
71.20.Dg
71.15.Mb
Opis:
The X-ray diffraction studies on a newly synthesized $Na_{26}Au_{25}Ga_{29}$ single crystal revealed the formation of a single phase 2/1-2/1-2/1 Bergman-type approximant and the presence of Au/Ga mixed occupancies in its unit cell containing 680 atoms. The structure model of the 2/1-2/1-2/1 approximant with composition $Na_{27}Au_{27}Ga_{31}$ was constructed by eliminating the chemical disorder with a minimum sacrifice of composition displacement. The full potential linearized augmented plane wave electronic structure calculations with subsequent full potential linearized augmented plane wave-Fourier analysis were performed for the 2/1-2/1-2/1 approximant $Na_{27}Au_{27}Ga_{31}$ with space group Pa3̅. The square of the Fermi diameter $(2k_{F})^2$, electrons per atom ratio e/a and the critical reciprocal lattice vector $|G|^2$ are determined. A shallow pseudogap at the Fermi level was interpreted as originating from interference of electrons having $(2k_{F})^2$=109.2±1.0 with sets of lattice planes with $|G|^2$'s centered at 108. The effective e/a value for the compound is found to be 1.76 in good agreement with 1.73 derived from a composition average of $(e/a)_{Na}$=1.0, $(e/a)_{Au}$=1.0 and $(e/a)_{Ga}$=3.0.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 535-538
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
Autorzy:
Juršėnas, S.
Kuokštis, E.
Miasojedovas, S.
Kurilčik, G.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2038100.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 567-573
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Free Volume, Molecular Mobility and Polymer Structure: Towards the Rational Design of Multi-Functional Materials
Autorzy:
Roussenova, M.
Hughes, D.
Enrione, J.
Diaz-Calderon, P.
Sivaniah, E.
Song, Q.
Ubbink, J.
Beavis, P.
Swain, A.
Alam, M.
Powiązania:
https://bibliotekanauki.pl/articles/1196297.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
82.35.Pq
66.30.je
82.35.Np
81.05.Qk
Opis:
In this short paper we illustrate the versatility of positron annihilation lifetime spectrometry when used for material characterisation by presenting a selection of recent lifetime studies carried out on novel polymeric materials with a wide range of potential industrial applications. We highlight the importance of local free volume in governing the macroscopic properties (e.g. permeation properties, mechanical strength) of these materials and how lifetime measurements can be used in conjunction with a number of complementary techniques in order to establish composition-structure-property relationships for these systems.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 801-805
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
Autorzy:
Juršėnas, S.
Miasojedovas, S.
Kurilčik, G.
Liuolia, V.
Žukauskas, A.
Chen, C. Q.
Yang, J. W.
Kuokštis, E.
Adivarahan, V.
Asif Khan, M.
Powiązania:
https://bibliotekanauki.pl/articles/2041736.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 235-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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