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    Wyświetlanie 1-9 z 9
    Tytuł:
    Grazing Incidence X-Ray Reflectivity Study of MBE-Grown Co/Cu Multilayers
    Autorzy:
    Pełka, J. B.
    Baczewski, L. T.
    Wawro, A.
    Domagała, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963397.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.30.-m
    75.70.-i
    Opis:
    In this work we report preliminary grazing-incidence X-ray reflectometry studies of multilayer structures composed of 3d metals Co and Cu deposited in the ultra-high vacuum molecular beam epitaxy system. The multilayers of different modulation period were deposited on glass substrate directly, or on 3d -metallic buffers of various thicknesses. The experimental specular reflectivity spectra were analyzed by a comparison with a theoretical model calculated from a recursive algorithm based on the Fresnel formula [1, 2]. It enabled us to estimate the structural parameters concerning layer thickness and roughness. The results obtained are correlated with magnetization measurements of the layered structures, as a function of modulation period, buffer type and thickness. A special attention to influence of interfacial roughness on magnetization results is paid.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 859-863
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Magnetism of MBE-Grown Co/Cu Multilayers
    Autorzy:
    Baczewski, L. T.
    Wawro, A.
    Domagała, J.
    Pełka, J.
    Szewczyk, A.
    Nabiałek, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1955475.pdf
    Data publikacji:
    1997-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.30.-m
    75.70.-i
    Opis:
    Structural and magnetic properties of Co/Cu multilayers deposited in the ultra-high vacuum molecular beam epitaxy system on glass substrates with different modulations periods were investigated. A structural characterization was performed by means of RHEED and Auger spectroscopy (in situ), small angle X-ray reflectivity and scanning tunneling microscopy. The samples obtained have a textured, polycrystalline layered structure for deposition at room temperature. Magnetization and in-plane magnetoresistance measurements were performed as a function of Cu and Co layer thicknesses. An influence of different buffers and of interface quality on magnetic properties was investigated.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 2; 315-319
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth and Properties of GaMnAs(100) Films
    Autorzy:
    Sadowski, J.
    Domagała, J.
    Bąk- Misiuk, J.
    Świątek, K.
    Kanski, J.
    Ilver, L.
    Oscarsson, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992165.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    79.60.Bm
    71.55.Eq
    Opis:
    We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 509-513
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
    Autorzy:
    Mycielski, A.
    Szadkowski, A.
    Łusakowska, E.
    Kowalczyk, L.
    Domagała, J.
    Bąk-Misiuk, J.
    Wilamowski, Z.
    Witkowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991957.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.10.Bk
    Opis:
    The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 441-445
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties
    Autorzy:
    Levchenko, K.
    Andrearczyk, T.
    Domagała, J.
    Sadowski, J.
    Kowalczyk, L.
    Szot, M.
    Figielski, T.
    Wosiński, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160667.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    61.05.cp
    78.20.Ls
    73.50.Jt
    75.30.Gw
    Opis:
    Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-90-A-93
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO by ALD - Advantages of the Material Grown at Low Temperature
    Autorzy:
    Guziewicz, E.
    Godlewski, M.
    Krajewski, T.
    Wachnicki, Ł.
    Łuka, G.
    Paszkowicz, W.
    Domagała, J.
    Przeździecka, E.
    Łusakowska, E.
    Witkowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791286.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    72.80.Ey
    Opis:
    The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 814-817
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial Growth and Optical Properties of PbTe/CdTe Semiconductor Heterostructures
    Autorzy:
    Szot, M.
    Kowalczyk, L.
    Smajek, E.
    Domukhovski, V.
    Domagała, J.
    Łusakowska, E.
    Taliashvili, B.
    Dziawa, P.
    Knoff, W.
    Wiater, M.
    Wojtowicz, T.
    Story, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811996.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Hx
    78.67.De
    78.67.Hc
    78.67.Pt
    Opis:
    Growth optimization, optical and structural properties of PbTe/CdTe multilayers grown by molecular beam epitaxy on GaAs (001) as well as on $BaF_2$ (111) substrates is reported. An intense photoluminescence in the mid-infrared region is observed from PbTe quantum wells excited with 1.17 eV pulsed YAG:Nd laser. The energy of the emission peak shows blue shift with decreasing PbTe well width and has a positive temperature coefficient. The influence of thermal annealing on photoluminescence spectra of PbTe/CdTe multilayers grown on $BaF_2$ substrate is discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1391-1396
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
    Autorzy:
    Wachnicki, Ł.
    Dużyńska, A.
    Domagala, J.
    Witkowski, B.
    Krajewski, T.
    Przeździecka, E.
    Guziewicz, M.
    Wierzbicka, A.
    Kopalko, K.
    Figge, S.
    Hommel, D.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492723.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Aa
    61.05.cp
    81.05.Dz
    Opis:
    Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and $Al_2O_3$. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-007-A-010
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and Properties of ZnMnTe Nanowires
    Autorzy:
    Zaleszczyk, W.
    Janik, E.
    Presz, A.
    Szuszkiewicz, W.
    Morhange, J. F.
    Dłużewski, P.
    Kret, S.
    Kirmse, H.
    Neumann, W.
    Dynowska, E.
    Domagała, J. Z.
    Caliebe, W.
    Aleszkiewicz, M.
    Pacuski, W.
    Golnik, A.
    Kossacki, P.
    Baczewski, L. T.
    Petroutchik, A.
    Karczewski, G.
    Wojtowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047697.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.Df
    68.65.La
    78.55.Et
    78.67.Bf
    81.15.Hi
    Opis:
    Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2μm and that Mn$\text{}^{2+}$ ions were incorporated into substitutional sites of the ZnTe crystal lattice.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 351-356
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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