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    Wyświetlanie 1-4 z 4
    Tytuł:
    An Experimental Study on Unipolar Induction
    Autorzy:
    Chen, K.
    Li, X.
    Hui, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030345.pdf
    Data publikacji:
    2017-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    01.55.+b
    03.50.De
    06.30.Ka
    41.20.Gz
    Opis:
    Unipolar induction phenomenon is a special kind of electromagnetic induction. There are two quite opposite theoretical explanations for this phenomenon, i.e., the N theory and the M theory. The research of unipolar induction has made significant progress, but there is no final conclusion by now. In this paper, an experiment of inversely rotating double Faraday disks and double magnets are designed, and the unipolar induction phenomenon is verified by means of theoretical calculation and experiment. Comparing and analyzing the theoretical calculation and experiment results, our experimental results support the N theory, that is to say, our experiment shows that the magnetic field does not rotate when the magnet rotates.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 2; 271-274
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interface Engineering in Heteroepitaxy
    Autorzy:
    Hong, S. K.
    Chen, Y.
    Ko, H. J.
    Yao, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035571.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.-p
    68.35.Dv
    81.15.-z
    81.15.Hi
    81.10.Aj
    Opis:
    We report the importance of interface engineering in heteroepitaxy with examples of plasma-assisted molecular beam epitaxial ZnO growths on (0001) sapphire substrates and on (0001) GaN/sapphire templates, whose interfaces are engineered to improve and to control properties of ZnO films. The growth of rocksalt structure MgO buffer on Al$\text{}_{2}$O$\text{}_{3}$ (0001) is developed for ZnO epitaxy. By employing the MgO buffer layer, the formation of 30$\text{}^{o}$ rotated mixed domains is prohibited and two-dimensional layer-by-layer growth of ZnO on sapphire substrate is achieved. High-resolution X-ray diffraction reveals the superior improvement in a crystal quality of ZnO films with an MgO buffer. Polarity of wurtzite structure ZnO films on Ga-polar GaN/sapphire templates is controlled by changing interface structures. By forming a single crystalline, monoclinic Ga$\text{}_{2}$O$\text{}_{3}$ interfacial layer between GaN and ZnO through O-plasma pre-exposure on the Ga-polar GaN surface, O-polar ZnO films are grown. By forming the ZnO/GaN heterointerface without an interfacial layer through the Zn pre-exposure on the Ga-polar GaN surface, Zn-polar ZnO films are grown.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 541-554
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application
    Autorzy:
    Miyamura, Y.
    Sekiguchi, T.
    Chen, J.
    Li, J.
    Watanabe, K.
    Kumagai, K.
    Ogura, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198415.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.-a
    61.85.+p
    61.72.Ff
    Opis:
    We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 991-993
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots
    Autorzy:
    Miyamura, Y.
    Chen, J.
    Prakash, R.
    Jiptner, K.
    Harada, H.
    Sekiguchi, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1363535.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    81.10.Fq
    61.72.Ff
    61.72.Hh
    61.72.Lk
    Opis:
    We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1024-1026
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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