Autor: Abbasi, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Performance Enhancement of High Power High Repetition Rate Semiconductor Opening Switches
Autorzy:: Abbasi, A.
Niayesh, K.
Shakeri, J.
Powiązania:: https://bibliotekanauki.pl/articles/1807869.pdf
Data publikacji:: 2009-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.De
Opis:: High power semiconductor opening switches (SOSs) with $P^+PNN^+$ doping profile have been used in different pulsed power applications because of their fast high current interruption capability. In high pulsed power applications with high repetition rate, temperature increase of the semiconductor switch during its operation is no more negligible. In this paper, the cut-off characteristics of SOSs with different doping profiles are compared and then the impact of the temperature increase on the performance of the semiconductor opening switch is investigated using a detailed physical model. The simulation results indicate that due to the temperature increase of the switch, both the current amplitude and the cut-off characteristics of the switch are affected. Semiconductor opening switches with different base materials (Si and SiC) are studied. Due to favorable intrinsic characteristics of SiC (higher thermal conductivity, higher saturation velocity and higher breakdown electric field), the performance of the SOS can be enhanced using SiC as the base material and the design of compact high pulsed power applications can be achieved.
Źródło:: Acta Physica Polonica A; 2009, 115, 6; 983-985
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Correction to the Higher Dimensional Black Hole Entropy
Autorzy:: Farmany, A.
Abbasi, S.
Naghipour, A.
Powiązania:: https://bibliotekanauki.pl/articles/1812029.pdf
Data publikacji:: 2008-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 04.60.-m
04.70.-s
04.70.Dy
03.65.Ud
Opis:: Using the modified Hawking radiation of a Schwarzschild black hole (based on the generalized uncertainty principle) we obtained the Bekenstein-Hawking entropy of a higher dimensional Schwarzschild black hole. Furthermore, the thermodynamics of such black hole is studied.
Źródło:: Acta Physica Polonica A; 2008, 114, 4; 651-655
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: High aspect ratio graphene nanosheets cause a very low percolation threshold for polymer nanocomposites
Autorzy:: Jan, R.
Habib, A.
Abbasi, H.
Powiązania:: https://bibliotekanauki.pl/articles/1061875.pdf
Data publikacji:: 2016-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Tm
Opis:: Liquid exfoliated, high aspect ratio (1272) graphene nanosheets (GNS) are dispersed in thermoplastic polyurethane (TPU) to prepare range of nanocomposites. A three fold increase in direct current conductivity is recorded at 0.0055 volume fraction (V_{f}) of GNS-TPU composites as compared to pristine TPU. It is suggested that the percolation threshold for conducting network achieved at low filler loadings is due to the high aspect ratio and homogeneous dispersion of GNS within the polymer. The experimental results are interpreted using interparticle distance model and modified power law. The two models predict threshold filler loading in 0.015-0.001 range volume fraction GNS based on the average values of mean length and no. of layers per nanosheet. The experimental results favor modified power law as it relies on aspect ratio of fillers. A slight deviation in our study from modified power law may be due to aggregation in as prepared GNS.
Źródło:: Acta Physica Polonica A; 2016, 129, 4; 478-481
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Peculiarities of deposition times on gas sensing behaviour of vanadium oxide thin films
Autorzy:: Bagheri Khatibani, A.
Abbasi, M.
Rozati, S.
Powiązania:: https://bibliotekanauki.pl/articles/1065062.pdf
Data publikacji:: 2016-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.-t
81.07.-b
73.61.Le
81.15.Rs
Opis:: The importance of vanadium oxide in solid state science as a semiconductor encouraged us to prepare and investigate its microstructure and surface properties related to gas sensing characteristics. Hence, vanadium oxide thin films were deposited by spray pyrolysis method. The prepared films were placed in an electric circuit and the sensing characteristics of these films to ethanol vapors were studied. It was possible to find correlations between nanostructure and electrical properties of the obtained thin films and to optimize conditions of its synthesis. By X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy, the structure of the deposited films was determined. Based on atomic force microscopy results, the fractal analysis showed a decreasing trend of the fractal dimension (the slope of the log (perimeter) vs. log (area)) versus the deposition time. It was found that the film growth and gas response were affected by the deposition time. The operating temperature of the sensor was optimized for the best gas response. In accordance with our findings, the film deposited at the lowest deposition time (20 min) had the highest sensing response to ethanol.
Źródło:: Acta Physica Polonica A; 2016, 129, 6; 1245-1251
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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