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Wyświetlanie 1-15 z 27
Tytuł:
Surface Morphological Properties of Mo-Based Thin Films on Glass
Autorzy:
Tashlykov, I.
Turavets, A.
Zukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400442.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jm
68.08.Bc
68.37.Ps
Opis:
In that report we observe the initial stages in the process of film growth at different irradiation doses. Investigations of influence of Mo deposition on glass substrates by means of self-ion-assisted deposition on its topography (atomic force microscopy) and wettability (sessile-drop method) were carried out. It was found out that with an increase of the irradiation dose, the average roughness and the contact angle increases rapidly at first and then decrease. 2.45-2.77 increase in the contact angle of water when Mo-based coating was deposited on the glass was observed.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 840-842
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Properties of Me/Si Structures Prepared by Means of Self-Ion Assisted Deposition
Autorzy:
Tashlykov, I.
Żukowski, P.
Mikhalkovich, O.
Baraishuk, S.
Powiązania:
https://bibliotekanauki.pl/articles/1198974.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
82.80.-d
62.20.Qp
Opis:
In this paper a composite structure, topography, wettability and nanohardness of a (100) Si surface modified by means of ion-assisted deposition of metal (Me) coatings in conditions of a self-irradiation are discussed.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1306-1308
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Ion Assisted Modification of Elastomer and Its Micro- and Macroscopic Properties
Autorzy:
Kasperovich, A.
Luhin, V.
Tashlykov, I.
Żukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1199250.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Lg
66.30.Fq
81.15.-z
68.35.Np
Opis:
The composition of Zr-based thin films on rubber was investigated by utilizing the Rutherford backscattering technique and RUMP code simulation. The level of adhesion between the coating fabricated on rubber by means of self-ion assisted deposition was measured using Pin Pull Test. The coating deposited on the rubber consists of Zr, O, C, H. The self-ion assisted deposition process may successfully control the level of adhesion of the coating to the rubber and causes strong modification of the macroscopic properties of the rubber surface.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1421-1424
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of Transparent Tin Dioxide Films with Variable Stoichiometric Composition
Autorzy:
Ksenevich, V.
Adamchuk, D.
Odzhaev, V.
Zukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402213.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Le
78.30.-j
81.15.Cd
Opis:
Tin dioxide films with variable stoichiometric composition were fabricated by means of dc magnetron sputtering followed by a 2-stage annealing process. The structural and electrical properties of tin dioxide films were investigated by means of the Raman spectroscopy and impedance spectroscopy, respectively. It was found that crystallinity and grain size of tin dioxide films increase with the increasing annealing temperature. The most conductive samples were obtained at the annealing temperature 375°C. Increasing of the impedance of films annealed at higher temperatures is explained by decrease of the concentration of oxygen vacancies.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 861-863
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Composition of CIS Compound Affected by Xe⁺ Irradiation
Autorzy:
Tashlykov, I.
Zukowski, P.
Silvanovich, D.
Gremenok, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402236.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ps
06.30.Bp
Opis:
The paper presents the results of investigation of element composition of CuInSe₂ (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 927-930
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Kinetics of the Change of $SnO_{x}$ Thin Films Conductivity during the Gas-Adsorptive Interaction
Autorzy:
Zarapin, V.
Luhin, V.
Zukowski, P.
Koltunowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1366165.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.43.Mn
73.61.Jc
Opis:
The subjects of investigation are thin semiconductor $SnO_{x}$ films received by thermal oxidation. The influence of gas environments on electrical conductivity of films were investigated by a static way by measurement of kinetic and equilibrium isotherm of adsorption of trimethylamine, alcohol, hydrogen sulfide and ammonia. The communication between a type isotherm of adsorption, chemical nature of gas and temperature is shown.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1319-1322
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Elemental Composition, Topography and Wettability of $Pb_{x}Sn_{1 - x}S$ Thin Films
Autorzy:
Tashlykov, I.
Turavets, A.
Gremenok, V.
Żukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1366292.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ps
06.30.Bp
Opis:
PbSnS thin films were prepared by hot-wall vacuum evaporation. The Rutherford backscattering technique was employed for the investigation of $Pb_{x}Sn_{1 - x}S$ thin films composition. With a help of atomic force microscopy the main stages in the development of the thin films were characterized. Contact angle measurements of water drop on $Pb_{x}Sn_{1 - x}S$ thin films have been conducted on our original setup.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1339-1343
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Allocation and Properties of Iron States in Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te in Forbidden Gap Energy Range
Autorzy:
Hołda, A.
Rodzik, A.
Melnikov, A.
Żukowski, P. W.
Powiązania:
https://bibliotekanauki.pl/articles/1872765.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
78.20.Jq
78.60.Hk
Opis:
The use of different experimental methods (reflectivity, absorption, photoconductivity and cathodoluminescence) allowed us to confirm the existence of the deep donor-like state of iron and present allocation and properties of the iron states in Cd$\text{}_{1-y}$Fe$\text{}_{x}$Te (0 ≤ x ≤ 0.05) at 300 K and 77 K in the forbidden gap energy range. It was concluded that the increase in width of the forbidden gap with the change of temperature from 300 K to 77 K leads mainly to the rise of the energy distance between the donor-like iron state $\text{}^{5}$E and the bottom of the conduction band.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 357-360
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Percolation Phenomena in $Cu_{x}(SiO_{y})_{100-x}$ Nanocomposite Films Produced by Ion Beam-Sputtering
Autorzy:
Koltunowicz, T.
Zukowski, P.
Czarnacka, K.
Svito, I.
Fedotov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402230.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.37.+q
72.80.Ga
73.22.-f
61.46.Df
64.60.ah
Opis:
In this paper the results of examinations of nanocomposites $Cu_{x}(SiO_{y})_{100-x}$ produced by ion beam sputtering using argon ions were presented. The examinations were performed by the use of ac devices for measuring frequency in the range 50 Hz-1 MHz and temperatures from 81 K to 273 K. The measurements were performed for the samples directly after production. Based on temperature dependences of conductivity σ , which were determined at the frequency 100 Hz, the Arrhenius graphs were prepared. From these graphs conductivity activation energies ΔE were calculated. Dependences of conductivity and activation energy of electrons on the metallic phase content x at the frequency 100 Hz were determined. Analysis of the obtained dependences shows that conductivity is a parabolic function of the metallic phase content x in nanocomposites. Changes of activation energies of nanocomposites, in which metallic phase contents are in the ranges x < 12 at.% and x > 68 at.%, demonstrate negative values - metallic type of conductivity. In the range 12 at.% < x < 68 at.% activation energies have positive values - the dielectric type of conductivity. It was established that for the metallic phase content of about 68 at.% the real percolation threshold occurs, and the conduction changes from dielectric to metallic type.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 908-911
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment
Autorzy:
Fedotov, A.
Korolik, O.
Mazanik, A.
Kołtunowicz, T.
Żukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1503985.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
81.40.Ef
Opis:
The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 108-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cathodoluminescence Study of Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te and Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:
Hołda, A.
Rodzik, A.
Melnikov, A. A.
Żukowski, P. W.
Powiązania:
https://bibliotekanauki.pl/articles/1933757.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Hk
78.55.Et
Opis:
The cathodoluminescence spectra for Cd$\text{}_{1-x}$Μn$\text{}_{x}$Te (0 < x ≤ 0.7) and Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te (0 < x ≤ 0.6) at room and liquid nitrogen temperature have been presented and discussed. Especially, the influence of increasing temperature and Mn content on cathodoluminescence spectra. The cathodoluminescence emission in Ζn$\text{}_{1-x}$Mn$\text{}_{x}$Te (Cd$\text{}_{1-x}$Μn$\text{}_{x}$Te) centered at ≈ 1.95 eV (2.0 eV) and ≈ 2.2 eV (2.5 eV) are ascribed to Stokes-shifted $\text{}^{4}$Τ$\text{}_{1}$($\text{}^{4}$G) → $\text{}^{6}$A$\text{}_{1}$($\text{}^{6}$S) and $\text{}^{4}$Τ$\text{}_{2}$($\text{}^{4}$G) → $\text{}^{6}$A$\text{}_{1}$($\text{}^{6}$S) internal transitions of Mn$\text{}^{+2}$ within the 3d$\text{}^{5}$ state, respectively.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 739-742
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with $H^{+}$ Ions
Autorzy:
Żukowski, P.
Węgierek, P.
Billewicz, P.
Kołtunowicz, T.
Komarov, F.
Powiązania:
https://bibliotekanauki.pl/articles/1504001.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with $H^{+}$ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ ($T_{p},$ f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ ($T_{p}$, f) have also been discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 125-128
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment
Autorzy:
Frantskevich, N.
Mazanik, A.
Frantskevich, A.
Kołtunowicz, T.
Żukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1503982.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
73.20.Hb
Opis:
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 105-107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Presence of Inductivity in $(CoFeZr)_x(PZT)_{1-x}$ Nanocomposite Produced by Ion Beam Sputtering
Autorzy:
Kołtunowicz, T.
Żukowski, P.
Boiko, O.
Fedotov, A.
Larkin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402211.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.23.Pq
79.20.Rf
81.40.Ef
72.80.Le
Opis:
This paper presents the investigations of the electrical properties of the $(CoFeZr)_{x}(PZT)_{1-x}$ nanocomposite with the metallic phase content x=43.8 at.%, which was produced by ion beam sputtering. Such preparation took place under an argon atmosphere with low oxygen content with its partial pressure $P_{O_2} = 2 \times 10^{-3} Pa$. The measurements were performed using alternating current within the frequency range of 50 Hz-10⁵ Hz for measuring temperatures ranging from 238 K to 328 K. The $(CoFeZr)_{43.8}(PZT)_{56.2}$ nanocomposite sample subjected to a 15 min annealing process in air at the temperature Tₐ=423 K demonstrates a phase angle of -90° ≤ θ ≤ 0° in the frequency range 50 Hz-10⁵ Hz. It corresponds to the capacitive type of conduction. In the frequency range 10⁴-10⁵ Hz sharp minima in selected conductivity vs. frequency characteristics occur, which corresponds to a current resonance phenomenon in RLC circuits. In case of a sample annealed at Tₐ=498 K the inductive type of conduction with 0° ≤ θ ≤ +90° occurs in a high frequency area. At the frequency $f_{r}$ characterized by the phase angle θ = 0°, the capacity value reaches its local minimum. It indicates a voltage resonance phenomenon in conventional RLC circuits. The θ = +90° crossing in the frequency dependence of phase angle corresponds to the current resonance phenomenon, which is represented by a strong local minimum in the conductivity vs. frequency characteristics.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 853-856
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of HPLC-MS with Electrospray Ionization for the Qualitative and Quantitative Analysis of Antibiotics in Pharmaceutical Formulation
Autorzy:
Likhtarovich, A.
Luhin, V.
Sovastei, O.
Zukowski, P.
Dado, M.
Powiązania:
https://bibliotekanauki.pl/articles/1402227.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
32.10.Bi
33.15.Ta
82.80.-d
Opis:
This study describes the application of electrospray ionization mass spectrometry in order to identify ten antibiotics (macrolides, penicillins, aminoglycosides). An optimum procedure was developed for determination of antibiotics of different grade. Positive ion spectra of most antibiotics are higher in intensity including an [M+H]⁺ ion and produce less fragmentation and are more informative compared to the negative ion spectra. The group of antibiotics exhibits the same characteristic fragmentation. The data base was developed for identification of antibiotics comparing of their molecular and fragment ions. The results of the study showed that the method with electrospray ionization is simple and quick which is useful in the routine determination of antibiotics and in their pharmaceutical dosage forms.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 901-904
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 27

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