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    Wyświetlanie 1-8 z 8
    Tytuł:
    SrS:Eu and CaS:Eu Thin Films: Influence of Host Lattice on Kinetics of Europium Emission
    Autorzy:
    Świątek, K.
    Godlewski, M.
    Niinistö, L.
    Leskelä, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923720.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    76.30.Kg
    78.55.Et
    Opis:
    In this paper we report the studies of photoluminescent properties of CaS:Eu and SrS:Eu thin films containing up to 3 mole % of Eu, grown by the atomic layer epitaxy method. The energy transfer and direct intrashell excitation channels of Eu ions are examined in function of temperature.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 769-772
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the Nature of Eu-Related Emissions in ZnS and CaS
    Autorzy:
    Świątek, K.
    Godlewski, M.
    Niinistö, L.
    Leskelä, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1879960.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    71.35.+z
    78.55.Et
    Opis:
    The Eu-connected recombination processes in ZnS and CaS are analyzed on the basis of optical studies. A new Eu-related emission in ZnS is attributed to the recombination of an exciton bound at the Eu$\text{}^{2+}$ center, while in CaS the emission is dominated by the direct Eu$\text{}^{2+}$ intra-ion transition.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 255-257
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Local Pseudoelastic Behaviour and Surface Characteristics of N Ion Implanted NiTi Shape Memory Alloy
    Autorzy:
    Levintant-Zayonts, N.
    Kwiatkowski, L.
    Swiatek, Z.
    Brzozowska, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030131.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.fg
    81.40.Jj
    61.72.U-
    61.72.-y
    Opis:
    The main goal of the proposed paper is to present the results of the nitrogen ion implantation effects on mechanical and corrosion properties of NiTi shape memory alloy. Local pseudoelasticity phenomena of NiTi were determined using the ultra-low load applied system. The load-penetration depth curves show that lower nitrogen fluence improves mechanical properties in the near surface layer but higher ion fluence leads to degradation of pseudoelasticity properties. Corrosion resistance of NiTi in the Ringer solution was evaluated by means of electrochemical methods. The results of potentiodynamic measurements in the anodic range for implanted NiTi indicate a decrease of passive current density range in comparison with non-treated NiTi, without any signs related to Ni release. The results of impedance measurements recorded at the corrosion potential show a capacitive behaviour for all samples without clear predominance of one of them. It can be explained by the fact that this result concerns the first stage of corrosion exposition. It is shown that nitrogen ion implantation leads to formation of modified surface of improved physicochemical properties.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 210-216
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Rare-Earth Excitation Mechanism in Wide Band Gap H-VI Compounds
    Autorzy:
    Karpińska, K.
    Świątek, K.
    Godlewski, M.
    Niinistö, L.
    Leskelä, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929798.pdf
    Data publikacji:
    1993-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    76.30.Kg
    78.55.Et
    Opis:
    The excitation mechanism of rare-earth emission in Eu and Ce doped CaS and SrS is studied. It is proposed that the Eu and probably also Ce emission is induced by the photoionization transition of the rare-earth ion, which is followed by the carrier trapping via the excited state of the ion. At increased temperatures the efficiency of excitation is reduced. We explain this effect by the carrier emission from the excited core state of the rare-earth ion to the continuum of the conduction (valence) band states. It is also suggested that the charge transfer state of the rare-earth ion may act as the intermediate state in the carrier trapping.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 5; 959-962
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth and Properties of ZnYbTe Layers
    Autorzy:
    Sadowski, J.
    Szamota-Sadowska, K.
    Świątek, K.
    Kowalczyk, L.
    Abounadi, A.
    Rajira, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952684.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    61.14.Hg
    Opis:
    The MBE grown ZnYbTe layers were characterized by X-ray diffraction, photoluminescence and reflectivity measurements. The MBE growth conditions allowing to obtain monocrystalline ZnYbTe layers were found to be metal-rich (MBE growth with excess of Zn flux). In optical measurements (photoluminescence, reflectivity), both transitions connected with ternary ZnYbTe compound and with Yb$\text{}^{3+}$ ions were detected. The quality of ZnYbTe layers with Yb content of 3% and 1% is inferior to the quality of pure ZnTe MBE layers, which is clearly seen in the results of photoluminescence and reflectivity measurements. In the ZnYbTe layers with 3% Yb, exhibiting monocrystalline character in reflection high-energy electron diffraction and X-ray diffraction measurements, optical transitions characteristic of pure YbTe were detected. In ZnYbTe layers with 1% Yb, no transitions connected with YbTe were observed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1060-1064
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Detection of Cyclotron Resonance in Serpentine Superlattice Quantum-Wire Arrays
    Autorzy:
    Świątek, K.
    Weman, H.
    Miller, M. S.
    Petroff, P. M.
    Merz, J. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929679.pdf
    Data publikacji:
    1993-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    76.40.+b
    71.25.Jd
    Opis:
    We report low-temperature studies of microwave-induced cyclotron resonance of photo-generated carriers in (Al,Ga)As serpentine superlattice quantum-wire arrays. The geometric size of the parabolic-crescent cross-section of the quantum wires was of the order of 100 Å × 50 Å, depending on the angle of the vicinal substrate and the amount of parabolic curvature. Comparing the obtained spectra, we estimate the relative degree of carrier confinement in the ordered AlGaAs structure.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 3; 583-586
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    XRD and TEM heating of large period Ni/Al multilayer coatings
    Autorzy:
    Świątek, Z.
    Gradys, A.
    Maj, Ł.
    Morgiel, J.
    Marszałek, K.
    Mania, R.
    Szlezynger, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1113635.pdf
    Data publikacji:
    2016-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Ac
    68.37.Lp
    Opis:
    The Ni/Al multilayer coating of λ ≈100 nm was deposited onto (001)-oriented monocrystalline silicon substrate using double target magnetron sputtering system equipped with rotating sample holder. The thicknesses of alternating layers were adjusted in the way to preserve the chemical composition ratio close to 50%Al:50%Ni (at.%). The in situ X-ray diffraction and in situ transmission electron microscopy heating experiments were carried out at relatively low heating rates (20°C/min) in order to study the phase transformation sequence. The investigations revealed that the reaction between Ni and Al multilayers starts at ≈200°C with precipitation of Al₃Ni phase, while above 300°C dominates precipitation of Ni₃Al and NiAl intermetallic phases. Both the X-ray and electron diffractions acquired at 450°C confirmed presence of the Ni₃Al and NiAl intermetallics, but the former pointed at still lasting traces of Ni(Al) solid solution.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 4; 880-883
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth and Properties of GaMnAs(100) Films
    Autorzy:
    Sadowski, J.
    Domagała, J.
    Bąk- Misiuk, J.
    Świątek, K.
    Kanski, J.
    Ilver, L.
    Oscarsson, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992165.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    79.60.Bm
    71.55.Eq
    Opis:
    We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 509-513
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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