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Wyszukujesz frazę "electric field effect" wg kryterium: Wszystkie pola


Wyświetlanie 1-4 z 4
Tytuł:
The Effect of Return Electrode Position on Induced Electric Fields for Electrical Stimulation of Retinal Ganglion Cells
Autorzy:
Celik, M.
Powiązania:
https://bibliotekanauki.pl/articles/1031744.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
electrical stimulation
electric field
current density
temperature
retina
visual prostheses
Opis:
Age-related macular degeneration and retinitis pigmentosa are the most countered eye diseases that damage photoreceptors and cause to lose the visual sense. To regain the visual sense, studies are focused on the electrical stimulation of nerve cells remain intact. The electrical stimulation is carried out with the electrode arrays that include a certain number of stimulation electrodes and a common return electrode. In this study, the retinal stimulation is modelled using a computational model to investigate stimulation performance depending on the return electrode position and its geometrical properties. Stimulation induced electric field, current density and temperature over the retinal tissue are examined. It is seen that closer placement of return electrode and stimulation electrodes causes high electric field intensity and current density between electrodes, which is quite risky for long term chronic implementation by the reason of the increase in the temperature beyond the safe limits. It is concluded that there is an indispensability for the distances, three to five times of the electrode diameter, between electrodes to avoid electrode corrosion and tissue damage.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 493-495
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Field Control of Magnetic Coupling in a Double Quantum Dot System and Related Parasitic Electric Dipole Effect
Autorzy:
Bak, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1534865.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.90.+f
75.75.Lf
Opis:
We prove that tunable magnetic interaction in a two-qubit spintronic device can arise due to the mutual competition of the Ruderman-Kittel-Kasuya-Yosida and double-exchange interactions. The values of induced electric dipoles (which arise when magnetic coupling is manipulated by the electric field) are calculated. We show that the dissipation of the energy during logic operations due to these parasitic dipoles can destroy quantum coherence in any quantum dot system.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 957-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of External Electric Field on Time of Nonlinear Optical Reorientational Effect in Nematics
Autorzy:
Bajdecki, W. K.
Karpierz, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/2035684.pdf
Data publikacji:
2003
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.-k
42.70.Df
Opis:
Nonlinear reorientation phenomena in nematic liquid crystals cause extremely large refractive index changes. However, this effect is relatively slow and the determination of the time necessary to appearing or disappearing of the nonlinear effect is an important issue. In this work we present measurements of the time of increasing the nematics reorientation induced by the light beam passing through the liquid crystalline layer. The influence of external low-frequency electric field suppressing reorientation is also reported. The obtained results describing relations between time and optical power of light as well as between time and external electric field intensity are in good agreement with theory.
Źródło:
Acta Physica Polonica A; 2003, 103, 2-3; 187-193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study
Autorzy:
Ochalski, T. J.
Żuk, J.
Vlasukova, L. A.
Powiązania:
https://bibliotekanauki.pl/articles/1968408.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.-e
Opis:
We present a study of detailed line shapes of photoreflectance spectra for Al$\text{}_{0.3}$Ga$\text{}_{0.7}$ As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As band gaps (E$\text{}_{0}$). The photoreflectance spectra originated in the vicinity of the Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 935-939
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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