Wszystkie pola: Wróblewski, B - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: The Study of Electron Properties of Carbon Nanotubes Deposited on Highly Orientated Pyrolytical Graphite Using Scanning Probe Spectroscopy
Autorzy:: Kamiński, M.
Wróblewski, M.
Cęgiel, M.
Susła, B.
Powiązania:: https://bibliotekanauki.pl/articles/2047328.pdf
Data publikacji:: 2007-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.37.Ef
73.63.Fg
73.63.-b
Opis:: In this paper we present experimental investigations of carbon nanotubes deposited on highly orientated pyrolytical graphite using scanning tunneling microscopy and scanning tunneling spectroscopy. The aforementioned methods apart from detailed topographic data provided us with information about local density of state. We also show the I-V and dI/dV characteristics, which display the metallic and semiconducting characters of investigated carbon nanotubes. All measurements were taken in the air and at room temperature.
Źródło:: Acta Physica Polonica A; 2007, 111, 5; 661-669
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: The Measurement of $YBa_2Cu_3O_{7-δ}$ Single Crystals Using the Atomic/Magnetic Force Microscopy
Autorzy:: Kamiński, M.
Wróblewski, M.
Susła, B.
Powiązania:: https://bibliotekanauki.pl/articles/1812278.pdf
Data publikacji:: 2008-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.37.Ps
68.37.Rt
74.70.-b
75.75.+a
Opis:: In this paper the experimental investigations of the $YBa_2Cu_3O_{7-δ}$ single crystal, using atomic force microscopy and magnetic force microscopy, are presented. The atomic force microscopy was used to identify oxidized and unoxidized $YBa_2Cu_3O_{7-δ}$ crystal. The $YBa_2Cu_3O_{7-δ}$ single oxidized crystal was examined for magnetic properties by means of magnetic force microscopy. The research was carried out at a room temperature and in the air atmosphere without external magnetic field.
Źródło:: Acta Physica Polonica A; 2008, 114, 1; 91-97
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: In Situ Conductance of Fe/Si and Fe/Ge Multilayers
Autorzy:: Chomiuk, P.
Błaszyk, M.
Luciński, T.
Wróblewski, M.
Susła, B.
Powiązania:: https://bibliotekanauki.pl/articles/1813491.pdf
Data publikacji:: 2008-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Sx
73.50.-h
75.70.Cn
Opis:: In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe-Si and Fe-Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe-Si (or Fe-Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Ge) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.
Źródło:: Acta Physica Polonica A; 2008, 113, 2; 657-662
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: High Resistivity GaN Single Crystalline Substrates
Autorzy:: Porowski, S.
Boćkowski, M.
Łucznik, B.
Grzegory, I.
Wróblewski, M.
Teisseyre, H.
Leszczyński, M.
Litwin-Staszewska, E.
Suski, T.
Trautman, P.
Pakuła, K.
Baranowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1968415.pdf
Data publikacji:: 1997-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
72.80.Ey
Opis:: High resistivity 10$\text{}^{4}$-10$\text{}^{6}$ Ω cm (300 K) GaN single crystals were obtained by solution growth under high N$\text{}_{2}$ pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 958-962
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Blue Laser on High N$\text{}_{2}$ Pressure-Grown Bulk GaN
Autorzy:: Grzegory, I.
Boćkowski, M.
Krukowski, S.
Łucznik, B.
Wróblewski, M.
Weyher, J.
Leszczyński, M.
Prystawko, P.
Czernecki, R.
Lehnert, J.
Nowak, G.
Perlin, P.
Teisseyre, H.
Purgał, W.
Krupczyński, W.
Suski, T.
Dmowski, L.
Litwin-Staszewska, E.
Skierbiszewski, C.
Łepkowski, S.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2030423.pdf
Data publikacji:: 2001-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Opis:: In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).
Źródło:: Acta Physica Polonica A; 2001, 100, Supplement; 229-232
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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