- Tytuł:
- Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures
- Autorzy:
-
Kalbarczyk, K.
Foltyn, M.
Grzybowski, M.
Stefanowicz, W.
Adhikari, R.
Li, Tian
Kruszka, R.
Kamińska, E.
Piotrowska, A.
Bonanni, A.
Dietl, T.
Sawicki, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1398574.pdf
- Data publikacji:
- 2016-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.25.Dc
73.40.Cg
73.43.Qt
78.55.Cr - Opis:
- Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.
- Źródło:
-
Acta Physica Polonica A; 2016, 130, 5; 1196-1198
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł