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Wyszukujesz frazę "Glowacki, R." wg kryterium: Wszystkie pola


Wyświetlanie 1-2 z 2
Tytuł:
Superconducting and Microstructural Properties of (Mg+2B)+MgB$\text{}_{2}$/Cu Wires Obtained by High Gas Pressure Technology
Autorzy:
Kario, A.
Morawski, A.
Głowacki, B. A.
Łada, T.
Smaga, M.
Diduszko, R.
Kolesnikov, D.
Zaleski, A. J.
Kondrat, A.
Gajda, D.
Powiązania:
https://bibliotekanauki.pl/articles/2047331.pdf
Data publikacji:
2007-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.71.Mn
Opis:
In order to improve the overall critical current characteristics of Cu sheathed in situ MgB$\text{}_{2}$ wires a special architecture of the wire, and processing parameters were used. The study presents the influence of the ex situ MgB$\text{}_{2}$ chemical barrier between ex situ core and Cu, suppressing the reaction of Cu with Mg. Wires, doped with 10 at.% SiC of 18 nm average grain size, were fabricated from MgH$\text{}_{2}$ and B or from Mg and B powders, using the powder-in-tube method. The methods of rotary swaging or drawing were used as the alternating wire-forming processes. The samples were annealed under high Ar gas pressure (hot isostatic pressing) at 750ºC and 1.0 GPa for 15 and 30 min. A significant difference in Cu distribution across the wires for a long and short time of sintering was observed. The formation of microstructure in the powder-in-tube process and the relationship between the microstructure and critical current density J$\text{}_{c}$ values, are discussed in this paper.
Źródło:
Acta Physica Polonica A; 2007, 111, 5; 693-703
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Czochralski Growth and Optical Properties οf $(Lu_{x}Gd_{1-x})_2SiO_5$ Solid Solution Crystals Single Doped with $Sm^{3+}$ and $~Dy^{3+}$
Autorzy:
Ryba-Romanowski, W.
Strzęp, A.
Głowacki, M.
Lisiecki, R.
Solarz, P.
Domagala, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399472.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Rz
42.70.Hj
78.40.-q
78.55.Fv
Opis:
Solid solution crystals $(Lu_{x}Gd_{1-x})_2SiO_5$ single doped with $Sm^{3+}$ and $Dy^{3+}$ were grown by the Czochralski method. Segregation coefficients Lu/Gd, melting temperatures and structures of solid solution crystals were determined for 0.15 ≤ x ≤ 0.8. It was found that for x ≥ 0.17 the crystals belong to the monoclinic system within a space group C2/c and their melting temperature diminishes monotonously from 1990C to 1780C when x decreases from 0.8 to 0.15. Disparity of ionic radii of $Lu^{3+}$ and $Gd^{3+}$ induces structural disorder that brings about an inhomogeneous broadening of spectral lines in absorption and emission spectra of incorporated luminescent $Sm^{3+}$ and $Dy^{3+}$ ions. Optical properties of obtained crystals were determined based on results of measurement of absorption and emission spectra and luminescence decay curves. Spectroscopic investigation revealed that $Sm^{3+}$ doped crystals show intense emission distributed in the visible-near infrared region with the most intense band centred at 605 nm and characterized by a branching ratio of 0.43. Emission spectrum of $Dy^{3+}$ doped crystals is dominated by a band centred at 575 nm and characterized by a branching ratio of 0.58. It has been concluded that the systems under study are potential laser materials able to generate visible emission upon GaN/InGaN laser diode pumping.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 321-328
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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