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    Wyświetlanie 1-9 z 9
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849000.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849019.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849057.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Calorimetric Measurements of Ga-Li System by Direct Reaction Method
    Autorzy:
    Dębski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/350810.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    gallium-lithium system
    Ga-Li
    calorimetry
    thermochemistry
    Opis:
    The direct reaction calorimetric method was used for the determination of the formation enthalpy of alloys which concentrations correspond to the: Ga7Li2, Ga9Li5, GaLi, Ga4Li5, Ga2Li3, and GaLi2 intermetallic phases. The obtained experimental values of the formation enthalpy were: –18.1 ±0.8 kJ/mol at., –26.5 ±0.3 kJ/mol at., –34.7 ±0.3 kJ/mol at., –33.5 ±0.5 kJ/mol at., –32.8 ±0.3 kJ/mol at. and –24.6 ±1.4 kJ/mol at., respectively. After the calorimetric measurements, all the samples were checked by way of X-ray diffraction investigations to confirm the structure of the measured alloys. All the measured values of the formation enthalpy of the Ga-Li alloys were compared with literature data and the data calculated with use of the Miedema model.
    Źródło:
    Archives of Metallurgy and Materials; 2017, 62, 2A; 919-926
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
    Autorzy:
    Taube, A.
    Sochacki, M.
    Szmidt, J.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/226802.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    gallium nitride
    MOS-HEMT
    high electron mobility
    transistor
    AlGaN
    GaN
    simulation
    Opis:
    The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
    Źródło:
    International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Recycling of Gallium from End-of-Life Light Emitting Diodes
    Autorzy:
    Nagy, S.
    Bokányi, L.
    Gombkötő, I.
    Magyar, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/356762.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    LED
    LED recycling
    LED chip
    gallium
    mechanical enrichment
    mechanochemical activation
    leaching
    Opis:
    Nowadays Light Emitting Diodes (LEDs) are widely utilized. They are applied as backlighting in Liquid Crystal Displays (LCD) and TV sets or as lighting equipments in homes, cars, instruments and street-lightning. End of life equipments are containing more and more LEDs. The recovery of valuable materials – such as Ga, Au, Cu etc. – from the LEDs is essential for the creating the circular economy. First task is the development of a proper recycling technology. Most of the researchers propose fully chemical or thermal-chemical pathway for the recycling of LEDs. In the meantime our approach based on the thorough investigation of the structure and composition of LEDs, and shown in this paper, is the combination of mechanical and chemical techniques in order to recover more valuable products, as well as to facilitate the mass transfer. Our laboratory scale experiments are introduced, the final aim of which is Ga recovery in accordance with our above approach. It was experimentally proved that the LED chips contain Ga and can be recovered by mechanical processes along with copper-product. Ga is presented on the surface of the chips in GaN form. Mechano-chemical activation in high energy density stirred medium mill and the following acidic leaching resulted in the enrichment of 99.52% of gallium in the pregnant solution.
    Źródło:
    Archives of Metallurgy and Materials; 2017, 62, 2B; 1161-1166
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Application of poly-energy implantation with H+ ions for additional energy levels formation in GaAs dedicated to photovoltaic cells
    Autorzy:
    Węgierek, Paweł
    Pietraszek, Justyna
    Powiązania:
    https://bibliotekanauki.pl/articles/141449.pdf
    Data publikacji:
    2019
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    energy levels
    gallium arsenide
    intermediate band solar cells
    ion implantation
    thermal admittance spectroscopy
    Opis:
    : The aim of this article is to present the results of research aimed at confirmation whether it is possible to form an intermediate band in GaAs implantation with H+ ions. The obtained results were discussed with particular emphasis on possible applications in the photovoltaic industry. As it is commonly known, the idea of intermediate band solar cells reveals considerable potential as the most fundamental principle of the next generation of semiconductors solar cells. In progress of the research, a series of GaAs samples were subjected to poly-energy implantation of H+ ions, followed by high-temperature annealing. Tests were conducted using thermal admittance spectroscopy, under conditions of variable ambient temperature, measuring signal frequency in order to localize deep energy levels, introduced by ion implantation. Activation energy ∆E was determined for additional energy levels resulting from the implantation of H+ ions. The method of determining the activation energy value is shown in Fig. 2 and the values read from it are σ0 = 10−9 (Ω·cm)−1 for 1000/T0 = 3.75 K−1 and σ1 = 1.34 × 10−4 (Ω·cm)−1 for 1000/T1 = 2.0 K−1 . As a result, we obtain ∆E ≈ 0.58 eV. It was possible to identify a single deep level in the sample of GaAs implanted with H+ ions. Subsequently, its location in the band gap was determined by estimating the value of ∆E. However, in order to confirm whether the intermediate band was actually formed, it is necessary to perform further analyses. In particular, it is necessary to implement a new analytical model, which takes into consideration the phenomena associated with the thermally activated mechanisms of carrier transport as it was described in [13]. Moreover, the influence of certain parameters of ion implantation, post-implantation treatment and testing conditions should also be considered.
    Źródło:
    Archives of Electrical Engineering; 2019, 68, 4; 925-931
    1427-4221
    2300-2506
    Pojawia się w:
    Archives of Electrical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    First vertical-cavity surface-emitting laser made entirely in Poland
    Autorzy:
    Gębski, Marcin
    Śpiewak, Patrycja
    Kołkowski, Walery
    Pasternak, Iwona
    Głowadzka, Weronika
    Nakwaski, Włodzimierz
    Sarzała, Robert P.
    Wasiak, Michał
    Czyszanowski, Tomasz
    Strupiński, Włodzimierz
    Powiązania:
    https://bibliotekanauki.pl/articles/2173617.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    semiconductor laser
    GaAs
    gallium arsenide
    optical communication
    VCSEL
    laser półprzewodnikowy
    arsenek galu
    komunikacja optyczna
    Opis:
    The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (<2 km) optical data communication across multiple-mode optical fiber. Our devices present state-of-the-art electrical and optical parameters, e.g. high room-temperature maximum optical powers of over 5 mW, laser emission at heat-sink temperatures up to at least 95°C, low threshold current densities (<10 kA/cm2) and wall-plug efficiencies exceeding 30% VCSELs can also be easily adjusted to reach emission wavelengths of around 780 to 1090 nm.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; art. no. e137272
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    First vertical-cavity surface-emitting laser made entirely in Poland
    Autorzy:
    Gębski, Marcin
    Śpiewak, Patrycja
    Kołkowski, Walery
    Pasternak, Iwona
    Głowadzka, Weronika
    Nakwaski, Włodzimierz
    Sarzała, Robert P.
    Wasiak, Michał
    Czyszanowski, Tomasz
    Strupiński, Włodzimierz
    Powiązania:
    https://bibliotekanauki.pl/articles/2090716.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    semiconductor laser
    GaAs
    gallium arsenide
    optical communication
    VCSEL
    laser półprzewodnikowy
    arsenek galu
    komunikacja optyczna
    Opis:
    The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (<2 km) optical data communication across multiple-mode optical fiber. Our devices present state-of-the-art electrical and optical parameters, e.g. high room-temperature maximum optical powers of over 5 mW, laser emission at heat-sink temperatures up to at least 95°C, low threshold current densities (<10 kA/cm2) and wall-plug efficiencies exceeding 30% VCSELs can also be easily adjusted to reach emission wavelengths of around 780 to 1090 nm.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; e137272, 1--6
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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