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    Wyświetlanie 1-3 z 3
    Tytuł:
    ITO layer as an optical confinement for nitride edge-emitting lasers
    Autorzy:
    Kuc, M.
    Sokół, A. K.
    Piskorski, Ł.
    Dems, M.
    Wasiak, M.
    Sarzała, R. P.
    Czyszanowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/200863.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    edge-emitting lasers
    InGaN/GaN
    computer simulation
    ITO
    optical confinement
    Opis:
    This paper presents the results of a numerical analysis of nitride-based edge-emitting lasers with an InGaN/GaN active region designed for continuous wave room temperature emission of green and blue light. The main goal was to investigate whether the indium thin oxide (ITO) layer can serve as an effective optical confinement improving operation of these devices. Simulations were performed with the aid of a self-consistent thermal-electrical-optical model. Results obtained for green- and blue-emitting lasers were compared. The ITO layer in the p-type cladding was found to effectively help confine the laser mode in the active regions of the devices and to decrease the threshold current density.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 147-154
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of the Surface Microtexture of Sputtered Indium Tin Oxide Thin Films
    Autorzy:
    Ţălu, Ştefan
    Kulesza, Sławomir
    Bramowicz, Miroslaw
    Stępień, Krzysztof
    Dastan, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2049693.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    AFM
    DC magnetron sputtering
    ITO thin films
    stereometric analysis
    3-D surface microtexture
    Opis:
    The present research work involves the study of the 3-D surface microtexture of sputtered indium tin oxide (ITO) prepared on glass substrates by DC magnetron at room temperature. The samples were annealed at 450°C in air and were distributed into five groups, dependent on ambient combinations applied, as follows: I group, using argon (Ar); II group, using argon with oxygen (Ar+O2); III group, using argon with oxygen and nitrogen (Ar+O2+N2); IV group, using argon with oxygen and hydrogen (Ar+O2+H2); and V group, using argon with oxygen, nitrogen, and hydrogen (Ar+O2+N2+H2). The characterization of the ITO thin film surface microtexture was carried out by atomic force microscopy (AFM). The AFM images were stereometrically quantitatively analyzed to obtain statistical parameters, by ISO 25178-2: 2012 and ASME B46.1-2009. The results have shown that the 3-D surface microtexture parameters change in accordance with different fabrication ambient combinations.
    Źródło:
    Archives of Metallurgy and Materials; 2021, 66, 2; 443-450
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optimised magnetron sputtering method for the deposition of indium tin oxide layers
    Autorzy:
    Musztyfaga-Staszuk, Małgorzata
    Pudiš, Dušan
    Socha, Robert
    Gawlińska-Nęcek, Katarzyna
    Panek, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/2090684.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    In2O3
    Sn2O
    ITO
    magnetron sputtering method
    metoda rozpylania magnetronowego
    Opis:
    The article presents the method of magnetron sputtering for the deposition of conductive emitter coatings in semiconductor structures. The layers were applied to a silicon substrate. For optical investigations, borosilicate glasses were used. The obtained layers were subjected to both optical and electrical characterisation, as well as structural investigations. The layers on silicon substrates were tested with the four-point probe to find the dependence of resistivity on the layer thickness. The analysis of the elemental composition of the layer was conducted using a scanning electron microscope equipped with an EDS system. The morphology of the layers was examined with the atomic force microscope (AFM) of the scanning electron microscope (SEM) and the structures with the use of X-ray diffraction (XRD). The thickness of the manufactured layers was estimated by ellipsometry. The composition was controlled by selecting the target and the conditions of the application, i.e. the composition of the plasma atmosphere and the power of the magnetrons. Based on the obtained results, this article aims to investigate the influence of the manufacturing method and the selected process parameter on the optical properties of thin films, which should be characterised by the highest possible value of the transmission coefficient (>85–90%) and high electrical conductivity.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 6; e139005, 1--6
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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