- Tytuł:
- Semiconductor contact layer characterization in a context of hall effect measurements
- Autorzy:
-
Kowalewski, Andrzej
Wróbel, Jarosław
Boguski, Jacek
Gorczyca, Kinga
Martyniuk, Piotr - Powiązania:
- https://bibliotekanauki.pl/articles/220890.pdf
- Data publikacji:
- 2019
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
metal contact
contact layer
contact resistance
Hall effect
resistivity
van der Pauw method
MSM structure
semiconductors’ characterization - Opis:
- A revision of the standard approach to characterization of thin-semiconductor-layer Hall samples has been proposed. Our results show that simple checking of I(V) curve linearity at room temperature might be insufficient for correct determination of bias conditions of a sample before measurements of Hall effect. It is caused by the nonlinear behaviour of electrical contact layers, which should be treated together with the tested layer a priori as a metal-semiconductor-metal (MSM) structure. Our approach was examined with a Be-doped p-type InAs epitaxial layer, with four gold contacts. Despite using full high-quality photolithography a significant asymmetry in maximum differential resistance (Rd) values and positions relative to zero voltage (or current) value was observed for different contacts. This suggests that such characterization should be performed before each high-precision magneto-transport measurement in order to optimize the bias conditions.
- Źródło:
-
Metrology and Measurement Systems; 2019, 26, 1; 109-114
0860-8229 - Pojawia się w:
- Metrology and Measurement Systems
- Dostawca treści:
- Biblioteka Nauki
Artykuł