Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Piotrowska, E" wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-5 z 5
    Tytuł:
    Analysis of fractional electrical circuit with rectangular input signal using Caputo and conformable derivative definitions
    Autorzy:
    Piotrowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/140842.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    fractional order system
    Caputo definition
    conformable fractional definition
    fractional electrical circuit
    Opis:
    An analysis of a given electrical circuit using a fractional derivative. The statespace equation was developed. The dynamics of tensions described by Kirchhoff’s laws equations. The paper used the definition of the integral derivative Caputo and CDF conformable fractional definition. An electrical circuit solution using Caputo and CDF definitions for rectangular with zero initial conditions was developed. The results obtained using the Caputo and CDF definitions were compared. The solutions are shown for capacitor voltages, for fractional derivative orders of 0.6, 0.8, 1. The results were compared using graphs.
    Źródło:
    Archives of Electrical Engineering; 2018, 67, 4; 789-802
    1427-4221
    2300-2506
    Pojawia się w:
    Archives of Electrical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of linear continuous-time systems by the use of the conformable fractional calculus and Caputo
    Autorzy:
    Piotrowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/141097.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    conformable fractional derivative
    fractional electrical circuit
    different fractional order system
    Opis:
    The paper presents general solutions for fractional state-space equations. The analysis of the fractional electrical circuit in the transient state is described by the equation of the state and space equations. The results are presented for the voltage of a capacitor and current in a coil, for different alpha values. The Caputo and conformable fractional derivative definitions have been considered. At the end, the results have been obtained.
    Źródło:
    Archives of Electrical Engineering; 2018, 67, 3; 629--639
    1427-4221
    2300-2506
    Pojawia się w:
    Archives of Electrical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
    Autorzy:
    Taube, A.
    Sochacki, M.
    Szmidt, J.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/226802.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    gallium nitride
    MOS-HEMT
    high electron mobility
    transistor
    AlGaN
    GaN
    simulation
    Opis:
    The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
    Źródło:
    International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M. A.
    Kamińska, E.
    Wojciechowski, T.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/220412.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    Wide band gap oxide semiconductors
    ZnO
    integrated optics structures
    planar waveguides
    Opis:
    The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 3; 401-412
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
    Autorzy:
    Taube, A.
    Guziewicz, M.
    Kosiel, K.
    Gołaszewska-Malec, K.
    Król, K.
    Kruszka, R.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/953063.pdf
    Data publikacji:
    2016
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    aluminum oxide
    MOS
    silicon carbide
    4H-SiC
    high-K dielectrics
    tlenek glinu
    węglik krzemu
    dielektryki high-k
    Opis:
    The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 537-551
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies