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Wyszukujesz frazę "Raman spectroscopy." wg kryterium: Temat


Wyświetlanie 1-4 z 4
Tytuł:
Raman spectroscopy of CdTe/ZnTe quantum dot structures
Autorzy:
Zielony, E
Placzek-Popko, E
Kamyczek, P
Henrykowski, A
Karczewski, G
Powiązania:
https://bibliotekanauki.pl/articles/174898.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
Raman spectroscopy
CdTe
ZnTe
quantum dot structures
Opis:
Semiconductor low-dimensional structures of CdTe quantum dots (QDs) embedded in ZnTe matrix have been investigated by micro-Raman spectroscopy. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by a molecular beam epitaxy technique on the p-type GaAs substrate. The Raman measurements have been performed at room temperature. The samples were excited by an Ar2+ laser of 514.5 nm wavelength. The Raman spectra have been recorded for different acquisition parameters of the measurement. For the reference and QD sample localized longitudinal (LO) phonons of 210 cm–1 wavenumber associated with the ZnTe layer are observed. In the case of QD sample another broadband corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm–1. Such behaviour does not exhibit the Raman spectra of the reference sample. Thus the Raman measurements confirm the presence of CdTe layer of quantum dots in the investigated material. Additionally, Raman spectra for both samples exhibit tellurium-related peaks at wavenumbers around 120 cm–1 and 140 cm–1, significantly increasing with laser time exposure. It is shown that the peaks are associated with the formation of Te aggregates on the ZnTe surface due to the laser damage in the ZnTe layer.
Źródło:
Optica Applicata; 2013, 43, 1; 181-185
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures
Autorzy:
Łozińska, Adriana
Badura, Mikołaj
Jadczak, Joanna
Bielak, Katarzyna
Ściana, Beata
Powiązania:
https://bibliotekanauki.pl/articles/174205.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
QCL core
quantum cascade laser
photoluminescence
Raman spectroscopy
Opis:
In the presented work, an optical approach of stress determining in metalorganic vapor phase epitaxy (MOVPE) grown quantum cascade laser (QCL) structures was reported. In the case of such sophisticated structures containing hundreds of thin layers, it is important to minimize the stress generated in the QCL core. Techniques enabling determination of stress in such thin layers as those described in the article are photoluminescence and Raman spectroscopies. Based on Raman shift or changes in photoluminescence signal, it is possible to analyze stress occurring in the structure.
Źródło:
Optica Applicata; 2020, 50, 2; 289-299
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of RF ICP PECVD process parameters of diamond-like carbon films on DC bias and optical emission spectra
Autorzy:
Oleszkiewicz, W
Markowski, J
Srnanek, R
Kijaszek, W
Gryglewicz, J
Kovac, J
Tlaczala, M
Powiązania:
https://bibliotekanauki.pl/articles/173686.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
PECVD
diamond-like carbon layers
OES
Raman spectroscopy
AFM
Opis:
The work presents the results of a research carried out with PlasmaLab Plus 100 system, manufactured by Oxford Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method. The change of an initial value of DC bias was investigated as a function of set values of the generator power (RF generator and ICP generator) in the constant power of the RF generator operation mode. The research shows that the value of DC bias nearly linearly depends on the RF generator power value and is affected only in a small degree by the power of ICP discharge. The capability of an installed OES spectrometer has been used to ensure the same starting conditions for the deposition processes of DLC films. The analysis of OES spectra of RF plasma discharge used in the deposition processes shows that the increase in ICP discharge power value results in the increased efficiency of the ionization process of a gaseous precursor (CH4). The quality of deposited DLC layers was examined by Raman spectroscopy. Basing on the acquired Raman spectra, the theoretical content of sp3 bonds in the structure of the film was estimated. The content is ranging from 30% to 65% and depends on ICP PECVD deposition process parameters.
Źródło:
Optica Applicata; 2013, 43, 1; 109-115
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of radio frequency inductively coupled plasma enhanced chemical vapour deposition process of diamond-like carbon films
Autorzy:
Kijaszek, W.
Oleszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/174787.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
diamond-like carbon
radio frequency inductively coupled plasma enhanced chemical vapour deposition RF ICP PECVD
Raman scattering spectroscopy
spectroscopic ellipsometry
Opis:
The diamond-like carbon materials have unique mechanical, optical, electrical and chemical properties. The material is commonly applied in automotive industry, medicine and in other everyday life products. However, the diamond-like carbons are not used in micro- and optoelectronics on a wider scale due to technological problems. The application of the diamond-like carbon films in electronic structure is limited because the standard methods do not ensure that the quality and properties of the deposited film will be satisfactory for a specific application. On the other hand, more sophisticated methods that allow manufacturing the diamond-like carbon film with adequate properties, such as microwave assisted chemical vapour deposition, require heating of the substrate to high temperature (above 1000°C). The solution to the problem is the radio frequency inductively coupled plasma enhanced chemical vapour deposition method that allows deposition of the diamond-like carbon films with satisfactory properties and the process can be carried out at room temperature. In the paper, basic information and issues concerning the diamond-like carbon films manufacturing technology by radio frequency inductively coupled plasma enhanced chemical vapour deposition method will be explained. The diamond-like carbon films were investigated by the Raman scattering spectroscopy and the spectroscopic ellipsometry.
Źródło:
Optica Applicata; 2016, 46, 2; 167-172
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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