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    Wyświetlanie 1-6 z 6
    Tytuł:
    Optical bistability in double quantum dot molecule with inter-dot tunnelling
    Autorzy:
    Yu, Chunchao
    Sun, Lihui
    Zhang, Huafeng
    Chen, Fang
    Powiązania:
    https://bibliotekanauki.pl/articles/174307.pdf
    Data publikacji:
    2019
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    optical bistability
    quantum dot molecule
    tunneling
    Opis:
    We have theoretically studied the optical bistability behaviors under an external electric field and a coupling laser field in double quantum dot molecule system with π-type four energy levels. It can be adjusted by the system parameters such as the electronic cooperation parameter, the tunneling strength, the coupling laser field, the probe and coupling laser detuning. These results may be useful in the experiment and provide new types of all-optical switching.
    Źródło:
    Optica Applicata; 2019, 49, 2; 293-301
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Output-input properties of incident light on a defect dielectric slab with quantum dot nanostructure
    Autorzy:
    Jafarzadeh, Hossein
    Powiązania:
    https://bibliotekanauki.pl/articles/174095.pdf
    Data publikacji:
    2019
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    quantum dot nanostructure
    optical bistability
    optical multistability
    Opis:
    We demonstrate output-input properties of incident light in a defect slab doped by three-level quantum dot nanostructure via quantum coherence and Fano-interference phenomena. Here, we will show that the output-input properties of the system can be adjusted by the Fano-interference strength, amplitude and the relative phase of the driving fields, respectively. Also, we consider the thickness effect of defect medium on controlling the output-input behaviors of probe light. Moreover, we realize that it is possible to switch between optical bistability and optical multistability by optimizing the conditions which are more practical in all-optical switching based nanoscale devices.
    Źródło:
    Optica Applicata; 2019, 49, 1; 101-113
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman spectroscopy of CdTe/ZnTe quantum dot structures
    Autorzy:
    Zielony, E
    Placzek-Popko, E
    Kamyczek, P
    Henrykowski, A
    Karczewski, G
    Powiązania:
    https://bibliotekanauki.pl/articles/174898.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    Raman spectroscopy
    CdTe
    ZnTe
    quantum dot structures
    Opis:
    Semiconductor low-dimensional structures of CdTe quantum dots (QDs) embedded in ZnTe matrix have been investigated by micro-Raman spectroscopy. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by a molecular beam epitaxy technique on the p-type GaAs substrate. The Raman measurements have been performed at room temperature. The samples were excited by an Ar2+ laser of 514.5 nm wavelength. The Raman spectra have been recorded for different acquisition parameters of the measurement. For the reference and QD sample localized longitudinal (LO) phonons of 210 cm–1 wavenumber associated with the ZnTe layer are observed. In the case of QD sample another broadband corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm–1. Such behaviour does not exhibit the Raman spectra of the reference sample. Thus the Raman measurements confirm the presence of CdTe layer of quantum dots in the investigated material. Additionally, Raman spectra for both samples exhibit tellurium-related peaks at wavenumbers around 120 cm–1 and 140 cm–1, significantly increasing with laser time exposure. It is shown that the peaks are associated with the formation of Te aggregates on the ZnTe surface due to the laser damage in the ZnTe layer.
    Źródło:
    Optica Applicata; 2013, 43, 1; 181-185
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Double tunneling induced transparency in the asymmetry quantum dot molecules
    Autorzy:
    Yu, C.
    Huang, H.
    Zhang, L.
    Xu, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/173599.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    quantum dot molecule
    slow light
    tunneling induced transparency
    Opis:
    Using the density matrix theory, we have studied the double tunneling induced transparency slow light in the double asymmetry quantum dot molecules. With applied electric field, double tunneling induced transparency occur in the same time. Four absorption peaks are found near the resonance energy level in the absorption spectrum and the absorption peak can be tuned by the applied electric field. The velocity and bandwidth of the multiple-windows slow light can also be controlled by the applied electric field. In our model, with Te =0.1meV, we can get about 0.001c and 20GHz bandwidth in each transparency window. Such a property may be applied in all optical buffers, optical switching and filter.
    Źródło:
    Optica Applicata; 2016, 46, 3; 473-481
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Goos–Hänchen shift via refractive index control of four-level quantum dot nanostructure
    Autorzy:
    Jafarzadeh, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/173281.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    quantum dot nanostructure
    Goos–Hänchen shift
    negative refractive index
    Opis:
    In this paper, we will discuss the Goos–Hänchen shifts properties of reflected and transmitted light beams from the cavity with four-level InGaN/GaN quantum dots nanostructure. We find that the Goos–Hänchen shifts properties of reflected and transmitted light beams can be controlled via adjusting the refractive index of four-level quantum dot nanostructure. Here, we show that by tunable infrared laser field the negative refraction index can be possible at certain values of probe frequency. Therefore, the large Goos–Hänchen shifts for reflected and transmitted light beams are possible for negative refractive index condition.
    Źródło:
    Optica Applicata; 2018, 48, 3; 499-513
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Power-induced lasing state switching and bistability in a two-state quantum dot laser subject to optical injection
    Autorzy:
    Jiang, Zaifu
    Wu, Zhengmao
    Jayaprasath, Elumalai
    Yang, Wenyan
    Hu, Chunxia
    Cui, Bing
    Xia, Guangqiong
    Powiązania:
    https://bibliotekanauki.pl/articles/173329.pdf
    Data publikacji:
    2020
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    two-state quantum dot laser
    lasing state switching
    bistability
    optical injection
    Opis:
    We theoretically investigate power-induced lasing state switching and bistability in a two-state quantum dot laser subject to optical injection. The simulated results show that, for a free-running two-state quantum dot laser operating at the ground state under low current, a power-induced lasing state switching between the ground state and the excited state can be achieved through introducing optical injection with a frequency (winj) close to the lasing frequency of excited state (wES). The injection power required for the state switching depends on the scanning route of injection power, i.e. there may exist state bistability for the injection power within a certain region. For forward scanning injection power, with the increase of frequency detuning (ΔΩ = winj – wES), the injection power required for the state switching shows a decreasing trend accompanied by slight fluctuations. However, for backward scanning injection power, the injection power required for the state switching exhibits obvious fluctuations with the increase of ΔΩ. The width of the hysteresis loop fluctuates with ΔΩ, and the fluctuation amplitude is increased with the increase of the injection current. Additionally, the influences of the inhomogeneous broadening factor and the electron escape rate on the bistability performances are analyzed.
    Źródło:
    Optica Applicata; 2020, 50, 2; 257-269
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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