- Tytuł:
- Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics
- Autorzy:
-
Śpiewak, Patrycja
Wasiak, Michał
Sarzała, Robert P. - Powiązania:
- https://bibliotekanauki.pl/articles/173286.pdf
- Data publikacji:
- 2020
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Tematy:
-
GaN
computer simulations
tunnel junction
VCSEL
vertical-cavity surface-emitting laser - Opis:
- This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing waveanti-node, and positioning of the active area at different anti-nodes are considered.
- Źródło:
-
Optica Applicata; 2020, 50, 2; 301-310
0078-5466
1899-7015 - Pojawia się w:
- Optica Applicata
- Dostawca treści:
- Biblioteka Nauki
Artykuł