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Wyszukujesz frazę "X-ray method" wg kryterium: Wszystkie pola


Wyświetlanie 1-3 z 3
Tytuł:
Elemental composition and rough source apportionment of fine particulate matter in air in Cracow, Poland
Autorzy:
Samek, L.
Gdowik, A.
Ogarek, J.
Furman, L.
Powiązania:
https://bibliotekanauki.pl/articles/208112.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
elemental compositions
X-ray fluorescence method
source apportionment
source contributions
Cracow
metoda fluorescencji rentgenowskiej
Kraków
koncentracja pyłów zawieszonych
źródła emisji zanieczyszczeń
Opis:
Samples of PM2.5 fraction (particles with aerodynamic diameter ≤2.5 mu m) of air particulates were collected in winter 2011 and summer 2012 in Cracow, Poland. The concentrations of PM2.5 were 50 ±23 mu g/m3 (wintertime) and 16 ± 6 mu g/mV (summertime). The energy dispersive X-Ray fluorescence method was used for the determination of the concentrations of PM2.5-related elements. Principal component analysis and multilinear regression analysis were used to determine source contributions to ambient concentrations of PM2.5. In wintertime, the sources of air pollution were identified as municipal emission, steel and ferrous industry (49.2%), traffic (37.8%) and other, not identified sources (13%), whereas during summer, they were traffic (53%), steel and ferrous industry (18%), and not identified sources (29%).
Źródło:
Environment Protection Engineering; 2016, 42, 1; 71-83
0324-8828
Pojawia się w:
Environment Protection Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
TiO2 thin films grown on SiO2–Si(111) by the reactive evaporation method
Autorzy:
Grodzicki, M
Wasielewski, R
Mazur, P
Zuber, S
Ciszewski, A
Powiązania:
https://bibliotekanauki.pl/articles/173459.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
titanium oxide
wettability
X-ray photoelectron spectroscopy
UV radiation
Opis:
TiO2 thin films were grown on silicon substrates using an electron-beam evaporator. Grainy TiO was used as the evaporation material. Temperature substrate during TiO2 growth was relatively low (about 150 °C), what is important for many optoelectronic devices and multilayers mirrors. High vacuum condition allows to maintain clean surfaces substrates before and during oxide growth. The morphology of titanium oxide thin films was ex situ investigated using atomic force microscopy operating in contact mode, X-ray photoelectron spectroscopy, X-ray powder diffractometry, and by means of a contact angle analyzer. The influence of annealing treatment and exposure to UV–VIS radiation on the morphology has been also discussed.
Źródło:
Optica Applicata; 2013, 43, 1; 99-107
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Towards a viable method of reusing silicon carbide. Physicochemical analyses in the studies on the industrial application of the material
Autorzy:
Niemczyk-Wojdyla, Anna
Fornalczyk, Agnieszka
Willner, Joanna
Zawisz, Rafał
Powiązania:
https://bibliotekanauki.pl/articles/2032847.pdf
Data publikacji:
2021
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
silicon carbide
X-ray spectroscopy
Acheson process
węglik krzemu
spektroskopia rentgenowska
proces Achesona
Opis:
The paper presents an investigation on the feasibility of recovery of the highly valuable silicon carbide (SiC) from the slurry waste generated from silicon wafer production in the photovoltaic and semiconductor industry. Compared to the other techniques of recycling, a facile and low-cost method of waste treatment via heat drying followed by low-energy mixing in a shaker mixer was proposed. As the result of the treatment, the slurry waste was converted into a powdered form with dominant content of SiC. Separated SiC material was characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, and sieve analysis. In addition, analyses of the bulk density, moisture content and melting test were carried out. As was confirmed by the physicochemical analyses, the dominant sieve fraction was in the range of 0.1-0.06 mm, the purity level was a minimum 99% mass of SiC, the moisture content - 0.3%, the bulk density - 1.3 g/cm3. The physicochemical characteristics of the material were crucial for understanding the material performance, assessment of the material quality and determining the perspective directions of the industrial application. The studies revealed that the material exhibited a high application potential as abrasive, especially in abrasive grinding and waterjet cutting.
Źródło:
Environment Protection Engineering; 2021, 47, 4; 43-52
0324-8828
Pojawia się w:
Environment Protection Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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