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    Wyświetlanie 1-3 z 3
    Tytuł:
    Modelling of thin Si layers growth on partially masked Si substrate
    Autorzy:
    Gułkowski, S.
    Olchowik, J.M.
    Jóźwik, I.
    Moskvin, P.P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933182.pdf
    Data publikacji:
    2008
    Wydawca:
    Politechnika Gdańska
    Tematy:
    epitaxial lateral overgrowth
    liquid-phase epitaxial growth
    computer simulations
    Opis:
    This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two-dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2008, 12, 1-2; 121-126
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of the interface evolution during Si layer growth on a partially masked substrate
    Autorzy:
    Gulkowski, S.
    Olchowik, J.
    Cieślak, K.
    Moskvin, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934033.pdf
    Data publikacji:
    2011
    Wydawca:
    Politechnika Gdańska
    Tematy:
    epitaxial lateral overgrowth
    liquid-phase epitaxial growth
    computer simulations
    Opis:
    High-quality thin Si layers obtained from the solution by epitaxial lateral overgrowth (ELO) can play a crucial role in photovoltaic applications. The laterally overgrown parts of the layer are characterized by a lower dislocation density than that of the substrate. The height and width of the layer depend on several factors, such as the technological conditions of liquid phase expitaxy (LPE), growth temperature, cooling rate and the geometry of the system (mask filling factor). Therefore, it is crucial to find the optimal set of technological parameters in order to obtain very thin structures with a maximum width (high aspect ratio). This paper presents a computational study of Si epilayer growth on a line-pattern masked silicon substrate from Si-Sn rich solution. To solve this problem, a mixed Eulerian-Lagrangian approach was applied. The concentration profile was calculated by solving the two-dimensional diffusion equation with appropriate boundary conditions. The growth velocity was determined on the basis of gradients of concentration in the border of the interface. Si interface evolution from the opened window was demonstrated.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2011, 15, 1; 91-98
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Elastic properties of the rectangular crystalline phase of planar hard cyclic pentamers
    Autorzy:
    Tretiakov, K. V.
    Wojciechowski, K. W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1965832.pdf
    Data publikacji:
    2001
    Wydawca:
    Politechnika Gdańska
    Tematy:
    elastic constants
    Poisson ratio
    hard molecule
    anisotropic body
    Monte Carlo simulations
    computer simulation
    close packing
    orientational phase transition
    Opis:
    Structural and elastic properties of the densest known solid phase of two-dimensional (2D) system of hard cyclic pentamers (each pentamer is composed of five discs which centres are placed at vertices of a perfect pentagon of sides equal to the disc diameter, delta) are studied by Monte Carlo simulations. The present study confirms that at high densities the pentamers form a 2D solid structure of rectangular lattice with two pentamers (which librate, without rotation, around their mean orientations) in the unit cell. Elastic constants calculated for this structure show that, in contrast to densely packed 2D hard cyclic heptamers (composed of seven discs of centres forming a perfect heptagon of sides equal to the disc diameter delta), the pentamers do not exhibit anomalous Poisson's ratios.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2001, 5, 3; 331-340
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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