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Wyszukujesz frazę "compact models" wg kryterium: Temat


Wyświetlanie 1-5 z 5
Tytuł:
Analog Circuits Sizing Using the Fixed Point Iteration Algorithm with Transistor Compact Models
Autorzy:
Javid, F.
Iskander, R.
Durbin, F.
Louerat, M.-M.
Powiązania:
https://bibliotekanauki.pl/articles/398025.pdf
Data publikacji:
2012
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
IP analogowe
design reuse
graf dwudzielny
model tranzystora
migracja technologii
analog IP
analog sizing
bipartite graphs
transistor compact models
technology migration
Opis:
This paper presents an algorithm, based on the fixed point iteration, to solve for sizes and biases using transistor compact models such as BSIM3v3, BSIM4, PSP and EKV. The proposed algorithm simplifies the implementation of sizing and biasing operators. Sizing and biasing operators were originally proposed in the hierarchical sizing and biasing methodology [1]. They allow to compute transistors sizes and biases based on transistor compact models, while respecting the designer's hypotheses. Computed sizes and biases are accurate, and guarantee the correct electrical behavior as expected by the designer. Sizing and biasing operators interface with a Spice-like simulator, allowing possible use of all available compact models for circuit sizing and biasing over different technologies. A bipartite graph , that contains sizing and biasing operators, is associated to the design view of a circuit, it is the design procedure for the given circuit. To illustrate the effectiveness of the proposed fixed point algorithm, a folded cascode OTA is efficiently sized with a 130nm process, then migrated to a 65nm technology. Both sizing and migration are performed in a few milliseconds.
Źródło:
International Journal of Microelectronics and Computer Science; 2012, 3, 1; 7-14
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling the characteristics of high-k HfO2-Ta2O5 capacitor in Verilog-A
Autorzy:
Angelov, G. V.
Powiązania:
https://bibliotekanauki.pl/articles/398142.pdf
Data publikacji:
2011
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
modelowanie elementów elektronicznych
model kompaktowy
symulacja obwodu
dielektryk bramkowy o wysokiej przenikalności elektrycznej
Verilog-A
Spectre
device modeling
compact models
circuit simulation
high-k gate dielectric
Opis:
A circuit simulation model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer is developed and coded in Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against experimental measurements of the HfO2-Ta2O5 slack structure.
Źródło:
International Journal of Microelectronics and Computer Science; 2011, 2, 3; 105-112
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Potential Modeling of a High-k HfO2-Ta2O5 Capacitor in Verilog-A
Autorzy:
Angelov, G. V.
Powiązania:
https://bibliotekanauki.pl/articles/397997.pdf
Data publikacji:
2012
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
modelowanie elementów elektronicznych
model kompaktowy
PSP
symulacja obwodu
dielektryk bramkowy o wysokiej przenikalności elektrycznej
Verilog-A
Spectre
device modeling
compact models
circuit simulation
high-k gate dielectric
Opis:
A compact model of a high-k HfO2-Ta2O5 mixed layer capacitor stack is developed in Matlab. Model equations are based on the surface potential PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language and it is implemented as external library in Spectre circuit simulator within Cadence CAD system. The results are validated against the experimental measurements of the HfO2-Ta2O5 stack structure.
Źródło:
International Journal of Microelectronics and Computer Science; 2012, 3, 3; 111-118
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Qucs/QucsStudio swept parameter technique for statistical circuit simulation
Autorzy:
Brinson, M. E.
Powiązania:
https://bibliotekanauki.pl/articles/397903.pdf
Data publikacji:
2013
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
QucsStudio
Qucs
statistical circuit simulation
swept parameter lists
Verilog-A compact semiconductor device models
statystyczna symulacja obwodu
Verilog-A
Opis:
Qucs and QucsStudio open source circuit simulators have a wealth of built in swept data features, including facilities for linear and logarithmic scans of simulation variables and for setting component values and device parameters. These simulators also allow semicolon separated lists of numerical values to be used as swept data. This little known feature provides a very flexible mechanism for generating component and device parameter statistical data. An outline of a statistical circuit simulation technique is presented in this paper. The proposed technique can be used with any general purpose circuit simulator equipped with swept data capabilities and as such is suitable for the study of device and circuit performance resulting from variations in device parameters and component values. The operation of the proposed simulation technique is illustrated with the results from an investigation of the statistical performance of a simple MOS current mirror integrated circuit cell, modeled with a speed optimized Verilog-A version of a long channel EPFL_EKV v2.6 MOS transistor model.
Źródło:
International Journal of Microelectronics and Computer Science; 2013, 4, 3; 92-97
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recent developments in Qucs-s Equation-Defined modelling of semiconductor devices and IC’s
Autorzy:
Brinson, M.
Kuznetsov, V.
Powiązania:
https://bibliotekanauki.pl/articles/397783.pdf
Data publikacji:
2017
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
Qucs
Qucs-S
Ngspice
XSPICE Code Models
compact semiconductor device modelling
Equation-Defined Devices
EDD
macromodels
XSPICE Code Model
makromodele
Opis:
The Qucs Equation-Defined Device was introduce roughly ten years ago as a versatile behavioural simulation component for modelling the non-linear static and dynamic properties of passive components, semiconductor devices and IC macromodels. Today, this component has become an established element for building experimental device simulation models. It’s inherent interactive properties make it ideal for device and circuit modelling via Qucs schematics. Moreover, Equation-Defined Devices often promote a clearer understanding of the factors involved in the construction of complex compact semiconductor simulation models. This paper is concerned with recent advances in Qucs-S/Ngspice/XSPICE modelling capabilities that improve model construction and simulation run time performance of Equation-Defined Devices using XSPICE model syntheses. To illustrate the new Qucs-S modelling techniques an XSPICE version of the EPFL EKV v2.6 long channel transistor model together with other illustrative examples are described and their performance simulated with Qucs-S and Ngspice.
Źródło:
International Journal of Microelectronics and Computer Science; 2017, 8, 1; 29-35
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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