Temat: SPICE - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Modelling the inﬂuence of self-heating on characteristics of IGBTs in the sub-threshold region
Autorzy:: Górecki, K.
Górecki, P.
Powiązania:: https://bibliotekanauki.pl/articles/397748.pdf
Data publikacji:: 2014
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: IGBT
electrothermal model
self-heating
SPICE
model elektrotermiczny
samonagrzewanie
Opis:: The paper refers to modelling characteristics of IGBT in SPICE software with self-heating taken into account. The form of the electrothermal model of the considered transistor and equations describing this model are proposed. The correctness of the proposed model is veriﬁed experimentally during the operation of the examined transistor at different cooling conditions. Particular attention is paid to the non-typical course of characteristics of the considered device at weak excitation. The shape of the obtained characteristics is discussed and the inﬂuence of the sub-threshold effect in the input MOS structure on these characteristics is analysed.
Źródło:: International Journal of Microelectronics and Computer Science; 2014, 5, 4; 149-154
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Analysis of a Simple Method of CMOS IC Design for Yield Optimization
Autorzy:: Tomaszewski, D.
Yakupov, M.
Powiązania:: https://bibliotekanauki.pl/articles/397989.pdf
Data publikacji:: 2012
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: CMOS
projektowanie pod kątem zysku
funkcja gęstości prawdopodobieństwa
dystrybuanta
modelowanie statystyczne
BPV
symulacja SPICE
design centering
design for yield
probability density function
cumulative distribution function
statistical modeling
BPV method
SPICE simulation
Opis:: A simple approach for CMOS integrated circuit (IC) design taking into account a process variability and oriented towards optimization of a parametric yield has been presented. Its concept is based on cumulative distribution functions of random variables representing IC performances subject to process variations. In the method it has been assumed that CMOS process statistical data are expressed in terms of so-called process parameter distributions. Thus the design centering is done via layout parameter tuning. The approach relies on maximizing the probability that random variables corresponding to IC performances remain within the performance boundaries. Also, a methodology for statistical characterization of CMOS process has been briefly described. Finally, the method operation has been illustrated using analytical and SPICE models of CMOS inverter, operational amplifier and ring oscillator.
Źródło:: International Journal of Microelectronics and Computer Science; 2012, 3, 3; 81-87
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Frequency domain non-linear compact modelling and simulation of IC spiral inductors on silicon
Autorzy:: Brinson, Mike
Powiązania:: https://bibliotekanauki.pl/articles/397951.pdf
Data publikacji:: 2018
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: Qucs
Qucs-S
Ngspice
Xyce
compact device modelling
Frequency Equation-Defined Devices
FEDD
Equation-Defined Devices
EDD
SPICE B type sources
Harmonic Balance simulation
Opis:: SPICE AC circuit simulation is fundamentally a small signal network analysis of a linear or non-linear circuit operating at specified DC bias conditions, where the electrical network component values are assumed not to be functions of AC input signal frequency. In the case of RF circuit simulation this assumption can give rise to significant modelling errors. With the recent improvements in General Public License (GPL) circuit simulators this situation is changing, particularly through the introduction of Frequency Dependent Equation-Defined Device (FEDD) models, non-linear current/voltage static and dynamic Equation-Defined Device (EDD) models and user controlled swept signal frequency simulation employing Harmonic Balance steady state analysis. The main purpose of this paper is to introduce a number of novel modelling and circuit simulation techniques that allow, and enhance, the construction of compact device models with embedded behavioural components whose non-linear properties are functions of AC input signal frequency. To demonstrate these new modelling techniques a compact model for a 10 GHz band width spiral inductor integrated on silicon is introduced, its compact model presented, and finally its simulation performance compared with published measured device data.
Źródło:: International Journal of Microelectronics and Computer Science; 2018, 9, 1; 13-26
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Adaptive EPFL-EKV Long and Short Channel MOS Device Models for Qucs, SPICE and Modelica Circuit Simulation
Autorzy:: Brinson, M. E.
Nabijou, H.
Powiązania:: https://bibliotekanauki.pl/articles/398007.pdf
Data publikacji:: 2012
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: model adaptacyjny MOS
Qucs
SPICE
Modelica
monitoring parametru
adaptive MOS models
equation-defined device modelling
Verilog-A
EPFL-EKV MOS-FET model
parameter and equation monitoring
EPFL-EKV MOS-FET
Opis:: Equation-defined non-linear functional elements are important building blocks in the development of compact semiconductor device models. Current trends in compact device modelling suggest widespread acceptance among the modeling community of Verilog-A, for semiconductor device specification, model exchange and circuit simulation. This paper outlines techniques for the development of adaptive EPFL-EKV long and short channel MOS models which stress user selectable model features and diagnostic capabilities. Adaptive EPFL-EKV nMOS models based on Verilog-A and Modelica are introduced and their performance compared with simulation data obtained using the "Quite universal circuit simulator" (Qucs), SPICE and the Modelica simulation environment.
Źródło:: International Journal of Microelectronics and Computer Science; 2012, 3, 1; 1-6
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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