- Tytuł:
- Analysis and optimization of LUDMOS transistors on a 0.18um SOI CMOS technology
- Autorzy:
-
Toulon, G.
Cortés, I.
Morancho, F.
Villard, B. - Powiązania:
- https://bibliotekanauki.pl/articles/397849.pdf
- Data publikacji:
- 2010
- Wydawca:
- Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
- Tematy:
-
moc MOSFET
LDMOS
RESURF
STI (płytki rów izolacyjny)
krzem na izolatorze
power MOSFET
STI (shallow trench isolation)
superjunction
silicon-on-insulator - Opis:
- This paper is focused on the design and optimization of power LDMOS transistors (V br > 120 Volts) with the purpose of being integrated in a new generation of Smart Power technology based upon a 0.18 μm SOI-CMOS technology. The benefits of applying the shallow trench isolation (STI) concept along with the 3D RESURF concept in the LDMOS drift region is analyzed in terms of the main static (Ron-sp/Vbr tradeoff) and dynamic (Miller capacitance and QgxRon FOM) characteristics. The influence of some design parameters such as the polysilicon gate electrode length and the STI length are exhaustively analyzed.
- Źródło:
-
International Journal of Microelectronics and Computer Science; 2010, 1, 1; 3-8
2080-8755
2353-9607 - Pojawia się w:
- International Journal of Microelectronics and Computer Science
- Dostawca treści:
- Biblioteka Nauki
Artykuł