Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Piekoszewski, R." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Electrode erosion mechanism in the rod plasma injector type of generator as deduced from the structure of irradiated substrates
Autorzy:
Piekoszewski, J.
Stanisławski, J.
Grotzschel, R.
Matz, W.
Jagielski, J.
Szymczyk, W.
Powiązania:
https://bibliotekanauki.pl/articles/147032.pdf
Data publikacji:
2002
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
plasma alloying
plasma melting
vapor ionization
Opis:
Titanium atoms were alloyed into a polycrystalline alundum substrate using a various number of intense pulses consisting of plasma of the working gas and vapor and low energy ions of Ti eroded from electrodes of the rod plasma injector type generator. It appears that at a single pulse titanium always forms a thin metallic film not mixed with the substrate material. With increasing number of pulses the amount of titanium atoms mixed into the substrate increases, whereas the thickness of the film - decreases. Analyses of phase composition and of structural properties, as well as computer simulations of thermal evolution brought the present authors to the conclusion that increase of number of pulses leads to decrease of melting temperature of the top layer of the substrate. It has also been confirmed that metallic ions eroded from electrodes do not undergo such acceleration like working gas ions do; their energy remains on the 200-300 eV level. It is concluded that erosion of the electrode material occurs during the last phase of the discharge via the vacuum arc mechanism.
Źródło:
Nukleonika; 2002, 47, 3; 113-117
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of nuclear techniques for characterization of materials surfaces : own investigations examples
Autorzy:
Sartowska, B.
Piekoszewski, J.
Waliś, L.
Starosta, W.
Barlak, M.
Nowicki, L.
Ratajczak, R.
Powiązania:
https://bibliotekanauki.pl/articles/146726.pdf
Data publikacji:
2012
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
conversion electron Mössbauer spectroscopy (CEMS)
nuclear reaction analysis (NRA)
nuclear techniques
surface characterization
surface modification
Opis:
Different methods and techniques for material characterization are often used as a standard procedure for the determination of material properties. Nuclear techniques provide new and more detailed information about the investigated materials. The main goal of the carried out experiments was to improve surface properties including wear, corrosion and high temperature oxidation resistance. Modification processes were carried out using high intensity pulsed plasma beams - HIPPB (106-108 W.cm-2) generated in a rod plasma injector (RPI). In most solid materials such treatment leads to a fast transient melting of the surface layer of the substrate followed by rapid crystallization. Heating and cooling processes are of non-equilibrium type. Initial and modified materials were characterized using different investigation methods including nuclear techniques. Results of the used nuclear techniques such as nuclear reaction analysis (NRA), Rutherford backscattered spectroscopy (RBS) and conversion electron Mössbauer spectroscopy (CEMS) are presented in the paper.
Źródło:
Nukleonika; 2012, 57, 4; 521-528
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implanted manganese redistribution in Si after He+ irradiation and hydrogen pulse plasma treatment
Autorzy:
Werner, Z.
Pochrybniak, C.
Barlak, M.
Piekoszewski, J.
Korman, A.
Heller, R.
Szymczyk, W.
Bocheńska, K.
Powiązania:
https://bibliotekanauki.pl/articles/147018.pdf
Data publikacji:
2011
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
dilute magnetic semiconductors (DMS)
Mn-implanted Si
ion beam induced epitaxial crystallization
Opis:
Si-Mn alloy with a Mn content of a few percent is potentially a candidate for room temperature (RT) dilute magnetic semiconductor (DMS). However, the present methods of material manufacture suffer from problems with poor Mn solubility and thermodynamical limitations. We study a non-equilibrium method in which silicon is first implanted with 160 keV manganese ions to a dose of 1 × 1016 ions/cm2 and next either irradiated with 1.5 MeV 4He+ ions from the Warsaw Van de Graaff accelerator at 400°C or treated with high-energy hydrogen plasma pulses. Conclusion from Rutherford backscattering spectrometry (RBS) examination of the samples is that both approaches lead to recovery of crystalline surface layer with manganese occupying off-substitutional sites. The potential development of the method is discussed.
Źródło:
Nukleonika; 2011, 56, 1; 5-8
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High - temperature oxidation resistance in yttrium implanted stainless steel
Autorzy:
Barlak, M.
Piekoszewski, J.
Werner, Z.
Sartowska, B.
Waliś, L.
Starosta, W.
Kierzek, J.
Kowalska, E.
Wilhelm, R. A.
Pochrybniak, C.
Woźnica, M.
Powiązania:
https://bibliotekanauki.pl/articles/146785.pdf
Data publikacji:
2012
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
high-temperature oxidation resistance
ion implantation
yttrium
Opis:
Austenitic AISI 304, 316L and ferritic 430 stainless steels were implanted with yttrium to fluences ranging between 1 x 1015 and 5 x 1017 ions/cm2. The samples were subjected to oxidation in air at a temperature of 1000 centigrade for a period of 100 h and next examined by stereoscopic optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX) and Rutherford back scattering spectrometry (RBS). The results obtained with the use of ion implantation are discussed.
Źródło:
Nukleonika; 2012, 57, 4; 473-476
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies