- Tytuł:
- Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data
- Autorzy:
-
Zaunert, F.
Endres, R.
Stefanov, Y.
Schwalke, U. - Powiązania:
- https://bibliotekanauki.pl/articles/308785.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
crystalline high-k gate dielectric
rare-earth oxide
praseodymium oxide
gadolinium oxide
damascene metal gate
CMP
CMOS process
TSUPREM4
MEDICI
interface state density
carrier mobility
remote coulomb scattering - Opis:
- The evaluation of the world's first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference counterparts with silicon dioxide gate dielectric. In addition, by means of technology simulation with TSUPREM4, models of these devices are established. Current-voltage characteristics and parameter extraction on the simulated structures is conducted with the device simulator MEDICI. Measured and simulated device characteristics are presented and the impact of interface state and fixed charge densities is discussed. Device parameters of high-k devices fabricated with standard poly-silicon gate and replacement metal gate process are compared.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 2; 78-85
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł