- Tytuł:
- On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs
- Autorzy:
-
Ortiz-Conde, A.
Garcia Sánchez, F.J.
Liou, J.J. - Powiązania:
- https://bibliotekanauki.pl/articles/309320.pdf
- Data publikacji:
- 2000
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
threshold voltage
channel length
series resistance
parameter extraction - Opis:
- The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2000, 3-4; 43-58
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł