- Tytuł:
- Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN film
- Autorzy:
-
Firek, P.
Werbowy, A.
Szmidt, J.
Olszyna, A. R. - Powiązania:
- https://bibliotekanauki.pl/articles/308834.pdf
- Data publikacji:
- 2005
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
cubic boron nitride
plasma etching
electric contacts - Opis:
- Properties of Al electric contacts to Si(p) surface exposed to fluorine-based plasma etching of nanocrystalline cubic boron nitride (c-BN) film grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry etched surface of Si(p) wafers. In addition, a part of the investigated samples was annealed in nitrogen atmosphere at the temperature of 673 K. Analysis of contract properties is based on current-voltage (I-V) measurements of the produced Al-Si structures. The presented investigations were performed in order to evaluate the efficiency of the applied plasma etching method of nanocrystalline c-BN from the viewpoint of its influence on the properties of metal contacts formed subsequently and thus on the performance of electronic devices involving the use of boron nitride.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2005, 1; 76-80
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł