- Tytuł:
- Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures
- Autorzy:
-
Pankov, Y.
Druzhinin, A. - Powiązania:
- https://bibliotekanauki.pl/articles/307640.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SOI
polysilicon layers
MLR - Opis:
- A physical model of grain boundary influence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3ź10(19)cm(-3) only.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 46-48
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł