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    Wyświetlanie 1-8 z 8
    Tytuł:
    Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma
    Autorzy:
    Kalisz, M.
    Głuszko, G.
    Beck, R. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/308057.pdf
    Data publikacji:
    2010
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    capacitance-voltage characteristics
    current-voltage characteristics
    fluorine plasma
    radio frequency reactive ion etching
    Opis:
    This study describes a novel technique to form good quality low temperature oxide (< 350 C degree). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE - reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I-V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures.
    Źródło:
    Journal of Telecommunications and Information Technology; 2010, 1; 20-24
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma
    Autorzy:
    Kalisz, M.
    Głuszko, G.
    Beck, R. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/308059.pdf
    Data publikacji:
    2010
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    capacitance-voltage characteristics
    current-voltage characteristics
    fluorine plasma
    high temperature annealing process
    radio frequency reactive ion etching
    Opis:
    This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching (RIE) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition (PECVD) of the final oxide. The obtained results show that fluorine incorporated at the PECVD oxide/Si interface during RIE is very stable even at high temperatures. Application of fluorination and high temperature annealing during oxide layer fabrication significantly improved the properties of the interface (Ditmb decreased), as well as those of the bulk of the oxide layer (Qeff decreased). The integrity of the oxide (higher Vbd ) and its uniformity (Vbd distribution) are also improved.
    Źródło:
    Journal of Telecommunications and Information Technology; 2010, 1; 25-28
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
    Autorzy:
    Kalisz, M.
    Beck, R. B.
    Barcz, A.
    Ćwil, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308657.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    fluorine
    reactive ion etching
    silicon fluoride
    boron thermal diffusion
    fluorocarbon plasma
    Opis:
    We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., rf power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing rf power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 25-29
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Challenges in ultrathin oxide layers formation
    Autorzy:
    Beck, R.B.
    Jakubowski, A.
    Łukasiak, L.
    Korwin-Pawłowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/307646.pdf
    Data publikacji:
    2001
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    silicon technology
    oxidation
    PECVD
    RTO
    gate oxide
    ultrathin
    layers
    Opis:
    In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the "Roadmap'2000". Formation, however, of such layers, creates a lot of technical and technological problems. The aim of this paper is to present the technological methods, that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2001, 1; 27-34
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology
    Autorzy:
    Bieniek, T.
    Beck, R. B.
    Jakubowski, A.
    Głuszko, G.
    Konarski, P.
    Ćwil, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308685.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    CMOS
    dual gate oxide
    gate stack
    oxynitride
    plasma implantation
    Opis:
    The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 3-8
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes
    Autorzy:
    Bieniek, T.
    Beck, R. B.
    Jakubowski, A.
    Konarski, P.
    Ćwil, M.
    Hoffman, P.
    Schmeißer, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308689.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    CMOS
    gate stack
    oxynitride
    plasma implantation
    Opis:
    Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 9-15
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of composition of ultra-thin silicon oxynitride layers fabricated by PECVD and ultrashallow rf plasma ion implantation
    Autorzy:
    Mroczyński, R.
    Bieniek, T.
    Beck, R. B.
    Ćwil, M.
    Konarski, P.
    Hoffman, P.
    Schmeißer, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308687.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ultra-thin dielectrics
    oxynitride
    SIMS
    XPS
    PECVD
    Opis:
    In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation and plasma enhanced chemical vapour deposition (PECVD). Chemical composition of silicon oxynitride layers was investigated by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The spectroscopic ellipsometry was used to determine both the thickness and refractive index of the obtained layers. The XPS measurements show considerable differences between the composition of the fabricated layers using each of the above mentioned methods. The SIMS analysis confirms XPS results and indicates differences in nitrogen distribution.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 20-24
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The influence of annealing (900?C) of ultra-thin PECVD silicon oxynitride layers
    Autorzy:
    Mroczyński, R.
    Głuszko, G.
    Beck, R. B.
    Jakubowski, A.
    Ćwil, M.
    Konarski, P.
    Hoffman, P.
    Schmeißer, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308691.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ultra-thin dielectrics
    silicon oxynitride
    PECVD
    CMOS
    Opis:
    This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characterization methods (C-V, I-V and charge- pumping). The XPS measurements show that SiOxNy is the dominant phase in the ultra-thin layer and high-temperature annealing results in further increase of the oxynitride phase up to 70% of the whole layer. Despite comparable thickness, SIMS measurement indicates a densification of the annealed layer, because sputtering time is increased. It suggests complex changes of physical and chemical properties of the investigated layers taking place during high-temperature annealing. The C-V curves of annealed layers exhibit less frequency dispersion, their leakage and charge-pumping currents are lower when compared to those of as-deposited layers, proving improvement in the gate structure trapping properties due to the annealing process.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 16-19
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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