Wszystkie pola: annealing - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Effective Design of the Simulated Annealing Algorithm for the Flowshop Problem with Minimum Makespan Criterion
Autorzy:: Hurkała, J.
Hurkała, A.
Powiązania:: https://bibliotekanauki.pl/articles/309187.pdf
Data publikacji:: 2012
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: flowshop
heuristics
makespan
simulated annealing
Opis:: In this paper we address the n-job, m-machine flowshop scheduling problem with minimum completion time (makespan) as the performance criterion. We describe an efficient design of the Simulated Annealing algorithm for solving approximately this NP-hard problem. The main difficulty in implementing the algorithm is no apparent analogy for the temperature as a parameter in the flowshop combinatorial problem. Moreover, the quality of solutions is dependent on the choice of cooling scheme, initial temperature, number of iterations, and the temperature decrease rate at each step as the annealing proceeds. We propose how to choose the values of all the aforementioned parameters, as well as the Boltzmann factor for the Metropolis scheme. Three perturbation techniques are tested and their impact on the solutions quality is analyzed. We also compare a heuristic and randomly generated solutions as initial seeds to the annealing optimization process. Computational experiments indicate that the proposed design provides very good results - the quality of solutions of the Simulated Annealing algorithm is favorably compared with two different heuristics.
Źródło:: Journal of Telecommunications and Information Technology; 2012, 2; 92-98
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma
Autorzy:: Kalisz, M.
Głuszko, G.
Beck, R. B.
Powiązania:: https://bibliotekanauki.pl/articles/308059.pdf
Data publikacji:: 2010
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: capacitance-voltage characteristics
current-voltage characteristics
fluorine plasma
high temperature annealing process
radio frequency reactive ion etching
Opis:: This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching (RIE) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition (PECVD) of the final oxide. The obtained results show that fluorine incorporated at the PECVD oxide/Si interface during RIE is very stable even at high temperatures. Application of fluorination and high temperature annealing during oxide layer fabrication significantly improved the properties of the interface (Ditmb decreased), as well as those of the bulk of the oxide layer (Qeff decreased). The integrity of the oxide (higher Vbd ) and its uniformity (Vbd distribution) are also improved.
Źródło:: Journal of Telecommunications and Information Technology; 2010, 1; 25-28
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Multiobjective Approach to Localization in Wireless Sensor Networks
Autorzy:: Marks, M.
Niewiadomska-Szynkiewicz, E.
Powiązania:: https://bibliotekanauki.pl/articles/309060.pdf
Data publikacji:: 2009
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ad hoc networks
localization
simulated annealing
stochastic optimization
wireless sensor network
Opis:: Wireless sensor network localization is a complex problem that can be solved using different types of methods and algorithms. Nowadays, it is a popular research topic. What becomes obvious is that there are several criteria which are essential when we consider wireless sensor networks. Our objective is to determine accurate estimates of nodes location under the constraints for hardware cost, energy consumption and computation capabilities. In this paper the application of stochastic optimization for performing localization of nodes is discussed. We describe two phase scheme that uses a combination of the trilateration method, along with the simulated annealing optimization algorithm. We investigate two variants of our technique, i.e., centralized and distributed. The attention is paid to the convergence of our algorithm for different network topologies and trade-off between its efficiency and localization accuracy.
Źródło:: Journal of Telecommunications and Information Technology; 2009, 3; 59-67
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Localization in Wireless Sensor Networks Using Heuristic Optimization Techniques
Autorzy:: Niewiadomska-Szynkiewicz, E.
Marks, M.
Kamola, M.
Powiązania:: https://bibliotekanauki.pl/articles/308429.pdf
Data publikacji:: 2011
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: evolutionary strategy
genetic algorithm
localization
location systems
nonconvex optimization
simulated annealing
wireless sensor network
Opis:: Many applications of wireless sensor networks (WSN) require information about the geographic location of each sensor node. Devices that form WSN are expected to be remotely deployed in large numbers in a sensing field, and to self-organize to perform sensing and acting task. The goal of localization is to assign geographic coordinates to each device with unknown position in the deployment area. Recently, the popular strategy is to apply optimization algorithms to solve the localization problem. In this paper, we address issues associated with the application of heuristic techniques to accurate localization of nodes in a WSN system. We survey and discuss the location systems based on simulated annealing, genetic algorithms and evolutionary strategies. Finally, we describe and evaluate our methods that combine trilateration and heuristic optimization.
Źródło:: Journal of Telecommunications and Information Technology; 2011, 4; 55-64
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Hierarchical Multiobjective Routing in MPLS Networks with Two Service Classes - A Meta-Heuristic Solution
Autorzy:: Girao-Silva, R.
Craveirinha, J.
Clímaco, J.
Powiązania:: https://bibliotekanauki.pl/articles/308908.pdf
Data publikacji:: 2009
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: multiobjective optimization
MPLS-Internet
routing models
simulated annealing
tabu search
Opis:: The paper begins by reviewing a two-level hierarchical multicriteria routing model for MPLS networks with two service classes (QoS and BE services) and alternative routing, as well as the foundations of a heuristic resolution approach, previously proposed by the authors. Afterwards a new approach, of meta-heuristic nature, based on the introduction of simulated annealing and tabu search techniques, in the structure of the dedicated heuristic, is described. The application of the developed procedures to a benchmarking case study will show that, in certain initial conditions, this approach provides improvements in the final results especially in more "difficult" situations detected through sensitivity analysis.
Źródło:: Journal of Telecommunications and Information Technology; 2009, 3; 20-37
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Searching for an Efficient System of Equations Defining the AES Sbox for the QUBO Problem
Autorzy:: Burek, Elżbieta
Mańk, Krzysztof
Wroński, Michał
Powiązania:: https://bibliotekanauki.pl/articles/27312952.pdf
Data publikacji:: 2023
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: AES Sbox
cryptanalysis
minimal equation system for Sbox
quantum annealing
QUBO
Opis:: The time complexity of solving the QUBO problem depends mainly on the number of logical variables in the problem. This paper focuses mainly on finding a system of equations that uniquely defines the Sbox of the AES cipher and simultaneously allows us to obtain the smallest known optimization problem in the QUBO form for the algebraic attack on the AES cipher. A novel method of searching for an efficient system of equations using linear-feedback shift registers has been presented in order to perform that task efficiently. Transformation of the AES cipher to the QUBO problem, using the identified efficient system, is presented in this paper as well. This method allows us to reduce the target QUBO problem for AES- 128 by almost 500 logical variables, compared to our previous results, and allows us to perform the algebraic attack using quantum annealing four times faster.
Źródło:: Journal of Telecommunications and Information Technology; 2023, 4; 30--37
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1-x-Nx
Autorzy:: Sedrine, N.
Rihani, J.
Harmand, J.
Chtourou, R.
Powiązania:: https://bibliotekanauki.pl/articles/308950.pdf
Data publikacji:: 2009
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: GaAs11-x -Nx
optical constants
semiconductors
spectroscopic ellipsometry
Opis:: We report on the effect of rapid thermal annealing (RTA) on GaAs1-x-Nx layers, grown by molecular beam epitaxy (MBE), using room temperature spectroscopic ellipsometry (SE). A comparative study was carried out on a set of GaAs1-x-Nx as-grown and the RTA samples with small nitrogen content (x = 0.1%, 0.5% and 1.5%). Thanks to the standard critical point model parameterization of the GaAs1-x-Nx extracted dielectric functions, we have determined the RTA effect, and its nitrogen dependence. We have found that RTA affects more samples with high nitrogen content. In addition, RTA is found to decrease the E1 energy nitrogen blueshift and increase the broadening parameters of E1, E1+?1, E'0 and E2 critical points.
Źródło:: Journal of Telecommunications and Information Technology; 2009, 1; 51-56
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Effects of stress annealing on the electrical and the optical properties of MOS devices
Autorzy:: Rzodkiewicz, W.
Kudła, A.
Rawicki, Z.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/308838.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: stress
MOS
Si-SiO2 system
electrical parameters
refractive index
Opis:: In this paper we show the results of a study of the effects of high-temperature stress annealing in nitrogen on the refraction index of SiO2 layers and electrical properties in metal-oxide-semiconductor (MOS) devices. We have experimentally characterized the dependence of the reduced effective contact potential difference (ECPD), the effective oxide charge density (Neff), and the mid-gap interface trap density (Dit) on the annealing conditions. Subsequently, we have correlated such properties with the dependence of the refraction index and oxide stress on the annealing conditions and silicon dioxide thickness. Also, the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions has been experimentally determined. We consider the contributions of the thermal-relaxation and nitrogen incorporation processes in determining changes in the SiO2 layer refractive index and the electrical properties with annealing time. This description is consistent with other annealing studies carried out in argon, where only the thermal relaxation process is present.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 115-119
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: The influence of annealing (900?C) of ultra-thin PECVD silicon oxynitride layers
Autorzy:: Mroczyński, R.
Głuszko, G.
Beck, R. B.
Jakubowski, A.
Ćwil, M.
Konarski, P.
Hoffman, P.
Schmeißer, D.
Powiązania:: https://bibliotekanauki.pl/articles/308691.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ultra-thin dielectrics
silicon oxynitride
PECVD
CMOS
Opis:: This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characterization methods (C-V, I-V and charge- pumping). The XPS measurements show that SiOxNy is the dominant phase in the ultra-thin layer and high-temperature annealing results in further increase of the oxynitride phase up to 70% of the whole layer. Despite comparable thickness, SIMS measurement indicates a densification of the annealed layer, because sputtering time is increased. It suggests complex changes of physical and chemical properties of the investigated layers taking place during high-temperature annealing. The C-V curves of annealed layers exhibit less frequency dispersion, their leakage and charge-pumping currents are lower when compared to those of as-deposited layers, proving improvement in the gate structure trapping properties due to the annealing process.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 16-19
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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