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Wyszukujesz frazę "type P" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors
Autorzy:
Ramos, David
Delmas, Marie
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Almqvist, Susanne
Becanovic, Smilja
Hellström, Per-Erik
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204214.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
surface leakage
type-II superlattice
megapixel
n-on-p
Opis:
This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 μm with n-on-p polarity. A lateral diffusion length of 16 μm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 μm pitch, and a potential operating temperature up to 100 K is demonstrated.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144556
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The growth and characterisation of type I GaSb/AlSb superlattice with a thin GaSb layer
Autorzy:
Fokt, Maciej
Jasik, Agata
Sankowska, Iwona
Mączko, Herbert S.
Paradowska, Karolina M.
Czuba, Krzysztof
Powiązania:
https://bibliotekanauki.pl/articles/27315692.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
type I AlSb/GaSb superlattice
8-band k·p perturbation theory
nextnano simulations
AlSb layer degradation
Opis:
This paper presents results of the characterisation of type I GaSb/AlSb superlattices (SLs) with a thin GaSb layer and varying thicknesses of an AlSb layer. Nextnano software was utilized to obtain spectral dependence of absorption and energy band structure. A superlattice (SL) with an energy bandgap of ~ 1.0 eV and reduced mismatch value was selected for experimental investigation. SLs with single (sample A) and double (sample B) AlSb barriers and a single AlSb layer (sample C) were fabricated using molecular beam epitaxy (MBE). Optical microscopy, high-resolution X-ray diffractometry, and photoluminescence were utilized for structural and optical characterisation. The presence of satellite and interference peaks in diffraction curves confirms the high crystal quality of superlattices. Photoluminescence signal associated with the superlattice was observed only for sample B and contained three low-intensity peaks: 1.03, 1.18, and 1.25 eV. The first peak was identified as the value of the energy bandgap of the SL. Other two peaks are related to optical transitions between defect states located at the interface between the SL and the top AlSb barrier. The time-dependent changes observed in the spectral characteristics are due to a modification of the SL/AlSb interface caused by the oxidation and hydroxylation of the AlSb layer.
Źródło:
Opto-Electronics Review; 2023, 31, 4; art. no. e147912
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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