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    Wyświetlanie 1-6 z 6
    Tytuł:
    InAs/InAsSb superlattice infrared detectors
    Autorzy:
    Ting, David Z.
    Soibel, Alexander
    Khoshakhlagh, Arezou
    Keo, Sam A.
    Rafol, Sir B.
    Fisher, Anita M.
    Hill, Cory J.
    Pepper, Brian J.
    Maruyama, Yuki
    Gunapala, Sarath D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2204211.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    type-II superlattice
    InAs/InAsSb
    complementary barrier infrared detectors
    strained layer superlattice
    Opis:
    Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144565
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors
    Autorzy:
    Ramos, David
    Delmas, Marie
    Ivanov, Ruslan
    Žurauskaitė, Laura
    Evans, Dean
    Almqvist, Susanne
    Becanovic, Smilja
    Hellström, Per-Erik
    Costard, Eric
    Höglund, Linda
    Powiązania:
    https://bibliotekanauki.pl/articles/2204214.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    surface leakage
    type-II superlattice
    megapixel
    n-on-p
    Opis:
    This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 μm with n-on-p polarity. A lateral diffusion length of 16 μm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 μm pitch, and a potential operating temperature up to 100 K is demonstrated.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144556
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
    Autorzy:
    Kopytko, Małgorzata
    Gomółka, Emilia
    Manyk, Tetiana
    Michalczewski, Krystian
    Kubiszyn, Łukasz
    Rutkowski, Jaroslaw
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818204.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    T2SLs
    superlattice
    III-V materials
    I-V characteristics
    Opis:
    Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
    Źródło:
    Opto-Electronics Review; 2021, 29, 1; 1--4
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
    Autorzy:
    Kopytko, Małgorzata
    Gomółka, Emilia
    Manyk, Tetiana
    Michalczewski, Krystian
    Kubiszyn, Łukasz
    Rutkowski, Jaroslaw
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818207.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    T2SLs
    superlattice
    III-V materials
    I-V characteristics
    Opis:
    Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
    Źródło:
    Opto-Electronics Review; 2021, 29, 1; 1--4
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure
    Autorzy:
    Lee, Hyun-Jin
    Eom, Jun Ho
    Jung, Hyun Chul
    Kang, Ko-Ku
    Ryu, Seong Min
    Jang, Ahreum
    Kim, Jong Gi
    Kim, Young Ho
    Jung, Han
    Kim, Sun Ho
    Choi, Jong Hwa
    Powiązania:
    https://bibliotekanauki.pl/articles/2204217.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    InAs/GaSb type-II superlattice
    dualband detector
    dark current
    spectral quantum efficiency
    noise equivalent temperature difference
    Opis:
    Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by biasselectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dualband detectors was also improved. Finally, a 20 µm pitch 640 x 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144560
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Long wavelength type-II superlattice barrier infrared detector for CubeSat hyperspectral thermal imager
    Autorzy:
    Rafol, Sir B.
    Gunapala, Sarath D.
    Ting, David Z.
    Soibel, Alexander
    Khoshakhlagh, Arezou
    Keo, Sam A.
    Pepper, Brian J.
    Hill, Cory J.
    Maruyama, Yuki
    Fisher, Anita M.
    Sood, Ashok
    Zeller, John
    Wright, Robert
    Lucey, Paul
    Nunes, Miguel
    Flynn, Luke
    Babu, Sachidananda
    Ghuman, Parminder
    Powiązania:
    https://bibliotekanauki.pl/articles/2204204.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    type-II superlattice
    focal plane array
    infrared detector
    quantum efficiency
    noise equivalent difference temperature
    dark current density
    anti-reflective coating
    Opis:
    The hyperspectral thermal imaging instrument for technology demonstration funded by NASA’s Earth Science Technology Office under the In-Space Validation of Earth Science Technologies program requires focal plane array with reasonably good performance at a low cost. The instrument is designed to fit in a 6U CubeSat platform for a low-Earth orbit. It will collect data on hydrological parameters and Earth surface temperature for agricultural remote sensing. The long wavelength infrared type-II strain layer superlattices barrier infrared detector focal plane array is chosen for this mission. With the driving requirement dictated by the power consumption of the cryocooler and signal-noise-ratio, cut-off wavelengths and dark current are utilized to model instrument operating temperature. Many focal plane arrays are fabricated and characterised, and the best performing focal plane array that fulfils the requirements is selected. The spectral band, dark current and 8-9.4 μm pass band quantum efficiency of the candidate focal plane array are: 8-10.7 μm, 2.1∙10ˉ⁵ A/cm², and 47%, respectively. The corresponding noise equivalent difference temperature and operability are 30 mK and 99.7%, respectively. Anti-reflective coating is deposited on the focal plane array surface to enhance the quantum efficiency and to reduce the interference pattern due to an absorption layer parallel surfaces cladding material.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144569
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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