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Wyszukujesz frazę "Solar cell" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Symmetrical and asymmetrical imino-naphthalimides in perovskite solar cells
Autorzy:
Korzec, Mateusz
Kotowicz, Sonia
Pająk, Agnieszka Katarzyna
Schab-Balcerzak, Ewa
Powiązania:
https://bibliotekanauki.pl/articles/2063885.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
naphthalimide
perovskite solar cell
Schiff base
imine
Opis:
In perovskite solar cells, series of symmetrical and asymmetrical imino-naphthalimides were tested as hole-transporting materials. The compounds exhibited high thermal stability at the temperature of the beginning of thermal decomposition above 300 °C. Obtained imino-naphthalimides were electrochemically active and their adequate energy levels confirm the application possibility in the perovskite solar cells. Imino-naphthalimides were absorbed with the maximum wavelength in the range from 331 nm to 411 nm and emitted light from the blue spectral region in a chloroform solution. The presented materials were tested in the perovskite solar cells devices with a construction of FTO/b-TiO2/m-TiO2/perovskite/ HTM/Au. For comparison, the reference perovskite cells were also performed (without hole-transporting materials layer). Of all the proposed materials tested as hole-transporting materials, the bis-(imino-naphthalimide) containing in core the triphenylamine structure showed a power conversion efficiency at 1.10% with a short-circuit current at 1.86 mA and an open-circuit voltage at 581 mV.
Źródło:
Opto-Electronics Review; 2021, 29, 4; 175--180
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dual-band absorption of a GaAs thin-film solar cell using a bilayer nano-antenna structure
Autorzy:
Khalaf, A. A. M.
Gaballa, M. D
Powiązania:
https://bibliotekanauki.pl/articles/1818246.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
dual absorption band
light trapping
plasmonic solar cell
nanoantenna
nanoparticles
Opis:
The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for light-trapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 171--175
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology of an ITO recombination layer deposited on a silicon wire texture for potential silicon/perovskite tandem solar cell applications
Autorzy:
Kulesza-Matlak, Grazyna
Szindler, Marek
Szindler, Magdalena M.
Sypien, Anna
Major, Lukasz
Drabczyk, Kazimierz
Powiązania:
https://bibliotekanauki.pl/articles/27315696.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
tandem solar cell
silicon nanowires
MAE etching
ITO
recombination layer
Opis:
This paper presents research on the deposition of an indium tin oxide (ITO) layer which may act as a recombination layer in a silicon/perovskite tandem solar cell. ITO was deposited by magnetron sputtering on a highly porous surface of silicon etched by the metal-assisted etching method (MAE) for texturing as nano and microwires. The homogeneity of the ITO layer and the degree of coverage of the silicon wires were assessed using electron microscopy imaging techniques. The quality of the deposited layer was specified, and problems related to both the presence of a porous substrate and the deposition method were determined. The presence of a characteristic structure of the deposited ITO layer resembling a "match" in shape was demonstrated. Due to the specificity of the porous layer of silicon wires, the ITO layer should not exceed 80 nm. Additionally, to avoid differences in ITO thickness at the top and base of the silicon wire, the layer should be no thicker than 40 nm for the given deposition parameters.
Źródło:
Opto-Electronics Review; 2023, 31, 4; art. no. e148222
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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