- Tytuł:
- Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern
- Autorzy:
-
Boguski, Jacek
Wróbel, Jarosław
Złotnik, Sebastian
Budner, Bogusław
Liszewska, Malwina
Kubiszyn, Łukasz
Michałowski, Paweł P.
Ciura, Łukasz
Moszczyński, Paweł
Odrzywolski, Sebastian
Jankiewicz, Bartłomiej
Wróbel, Jerzy - Powiązania:
- https://bibliotekanauki.pl/articles/2204219.pdf
- Data publikacji:
- 2023
- Wydawca:
- Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
- Tematy:
-
wafer homogeneity
wafer defect pattern
surface roughness
indium arsenide
beryllium doping - Opis:
- The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and highresolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.
- Źródło:
-
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144564
1230-3402 - Pojawia się w:
- Opto-Electronics Review
- Dostawca treści:
- Biblioteka Nauki
Artykuł