- Tytuł:
- Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures
- Autorzy:
-
Pucicki, D.
Bielak, K.
Dawidowski, W.
Ściana, B.
Tłaczała, M. - Powiązania:
- https://bibliotekanauki.pl/articles/174427.pdf
- Data publikacji:
- 2016
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Tematy:
-
dilute nitrides
optical properties
carrier confinement
photoluminescence - Opis:
- In this work, the authors present the results of optical characterization of GaAs-based multiple quantum well heterostructures, together with energy band structure analysis. The optical properties were investigated by applying photoluminescence spectroscopy. Structures with GaInNAs, GaInAs and GaNAs multiple quantum wells emitting around 1 μm, grown by atmospheric pressure metalorganic vapor phase epitaxy, were compared in this work. The role of nitrogen in quantum well carriers confinement potential was analysed. The photoluminescence intensities of the samples were correlated with the analysis of energy band structures and the overlaps of the carriers’ wave functions. In addition, the main carrier activation energies were estimated based on photoluminescence temperature dependence and the Arrhenius plots analysis. It was deduced that the thermal photoluminescence decay is most probably related to the escape of electrons whereas the holes, independently of the potential well depth, are additionally confined by the local inhomogeneities or by the Coulomb interaction with the confined electrons.
- Źródło:
-
Optica Applicata; 2016, 46, 2; 255-263
0078-5466
1899-7015 - Pojawia się w:
- Optica Applicata
- Dostawca treści:
- Biblioteka Nauki
Artykuł